System and method for measuring electrical properties of materials
An illustrative system disclosed herein includes a conductive probe that is adapted to hold a quantity of mercury, wherein the conductive probe includes a conductive body with an outlet and a mercury control system adapted to supply mercury to the conductive probe. In this example, the system also includes an image sensor that is adapted to obtain an image of a mercury droplet positioned on a surface of a material and a measurement system that is adapted to receive the image of the mercury droplet and calculate a contact area between the mercury droplet and the surface of the material based upon the image of the mercury droplet.
1. A system, comprising:
a conductive probe that is adapted to hold a quantity of mercury, the conductive probe comprising a conductive body with an outlet;
a mercury control system adapted to supply mercury to the conductive probe;
an image sensor that is adapted to obtain an image of a mercury droplet positioned on a surface of a material, wherein the image sensor includes a lens with an imaging axis that is oriented substantially parallel to the surface of the material; and
a measurement system that is adapted to receive the image of the mercury droplet and calculate a contact area between the mercury droplet and the surface of the material based upon the image of the mercury droplet.
2. The system of claim 1 , wherein the material comprises at least one layer of material positioned above a semiconductor substrate and wherein the surface is an upper surface of the at least one layer of material.
3. The system of claim 1 , wherein the material comprises a semiconductor substrate and wherein the surface is an upper surface of the semiconductor substrate.
4. The system of claim 1 , wherein the material comprises one of silicon dioxide, silicon nitride, a high-k material, a dielectric film, a metal silicide, a polymer film, a metal-containing material or a semiconductor material.
5. The system of claim 1 , wherein the measurement system is further adapted to calculate at least one of a capacitance, a dielectric constant, a breakdown voltage, a barrier height, a current leakage, Time Dependent Dielectric Breakdown (TDDB), a doping concentration, an interface charge density or a surface charge density of the material using at least the calculated contact area.
6. The system of claim 1 , further comprising a voltage source that is conductively coupled to the conductive probe.
7. The system of claim 1 , further comprising an LCR (inductance (L), capacitance (C) and resistance (R)) unit that is operatively coupled to the measurement unit.
8. A system, comprising:
a semiconductor substrate;
at least one layer of material positioned above an upper surface of the semiconductor substrate;
a conductive probe that is adapted to hold a quantity of mercury, the conductive probe comprising a conductive body with an outlet
a mercury control system adapted to supply mercury to the conductive probe and force a portion of the mercury within the conductive probe out of the outlet so as to form a mercury droplet positioned on an upper surface of the at least one layer of material;
an image sensor that is adapted to obtain an image of the mercury droplet positioned, wherein the image sensor comprises a lens with an imaging axis that is oriented substantially parallel to the surface of the material; and
a measurement system that is adapted to receive the image of the mercury droplet and calculate a contact area between the mercury droplet and the upper surface of the at least one layer of material based upon the image of the mercury droplet.
9. The system of claim 8 , further comprising a voltage source that is conductively coupled to the conductive probe.
10. The system of claim 8 , further comprising an LCR unit that is operatively coupled to the measurement unit.
11. A method, comprising:
positioning a conductive probe above a surface of a material, the conductive probe comprising a quantity of mercury positioned therein and wherein the conductive probe comprises a conductive body with an outlet;
forcing a portion of the mercury within the conductive probe out of the outlet so as to form a mercury droplet on the surface of the material;
obtaining an image of the mercury droplet that is positioned on the surface of the material, wherein obtaining the image of the mercury droplet comprises positioning an image sensor such that an imaging axis of a lens of the image sensor is oriented substantially parallel to the surface of the material; and
calculating a contact area between the mercury droplet and the surface of the material based upon the image of the mercury droplet.
12. The method of claim 11 , wherein the material comprises at least one layer of material positioned above a semiconductor substrate and wherein the surface is an upper surface of the at least one layer of material or wherein the material comprises a semiconductor substrate and wherein the surface is an upper surface of the semiconductor substrate.
13. The method of claim 11 , wherein obtaining the image of the mercury droplet comprises obtaining a substantially real-time image of the mercury droplet so as to provide a feedback mechanism to adjust or maintain a size of the contact area.
14. The method of claim 11 , further comprising calculating at least one of a capacitance, a dielectric constant, a breakdown voltage, a barrier height, a current leakage, Time Dependent Dielectric Breakdown (TDDB), a doping concentration, an interface charge density or a surface charge density of the material using at least the calculated contact area.
15. The method of claim 11 , further comprising, based upon the image of the mercury droplet, applying a voltage to the conductive probe.
16. The method of claim 11 , further comprising, based upon the image of the mercury droplet, applying a voltage to the conductive probe to change the contact area between the mercury droplet and the surface of the material.
17. The method of claim 11 , further comprising, based upon the image of the mercury droplet, changing a vertical spacing between an outlet of the conductive probe and the surface of the material to change the contact area between the mercury droplet and the surface of the material.