Manufacturing method of wiring structure and wiring structure
A trench is formed in an insulating film, carbon is formed on the insulating film to fill an inside of the trench, a catalytic material is formed on the carbon, heat treatment is performed on the carbon to turn the carbon into graphenes which are stacked in a plurality of layers, and the catalytic material and a part of the graphenes on the insulating film are removed to make the graphenes remain only in the trench.
1. A manufacturing method of a wiring structure, comprising:
forming a trench in an insulating film;
forming carbon on the insulating film to fill an inside of the trench;
forming a catalytic material on the carbon;
performing heat treatment on the carbon to turn the carbon into graphenes which are stacked in a plurality of layers; and
removing the catalytic material and a part of the graphenes on the insulating film, to make the graphenes remain only in the trench.
2. The manufacturing method of the wiring structure according to claim 1 , wherein
the inside of the trench of the insulating film is directly filled with the graphenes.
3. The manufacturing method of the wiring structure according to claim 1 , wherein
the trench is a connection hole or a wiring trench.
4. The manufacturing method of the wiring structure according to claim 1 , wherein
the trench is made of a connection hole and a wiring trench which are integrally formed.
5. The manufacturing method of the wiring structure according to claim 1 , wherein
the graphenes are subjected to intercalation or doping using molecules of a different kind.
6. The manufacturing method of the wiring structure according to claim 1 , wherein
the catalytic material is formed to have a thickness in a range from a thickness equivalent to a thickness of the carbon to a thickness which is twice the thickness of the carbon.