Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device
In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.
1. A compound semiconductor device comprising:
a chip substrate;
an aluminum nitride layer disposed above the chip substrate; and
a compound semiconductor layer disposed above the aluminum nitride layer,
wherein a part of a side of the chip substrate, a side of the aluminum nitride layer and a side of the compound semiconductor layer form an inclined surface,
wherein an end face of the chip substrate is perpendicular to an upper surface of the chip substrate,
wherein the inclined surface extends to the end face of the chip substrate, and
wherein the side of the aluminum nitride layer and the side of the chip substrate are covered by an amorphous layer or a polycrystal layer and in direct contact with the amorphous layer or the polycrystal layer.
2. The compound semiconductor device according to claim 1 , wherein all of the side of the compound semiconductor layer forms an inclined surface.
3. The compound semiconductor device according to claim 1 , wherein the amorphous layer or the polycrystal layer is a layer in which the aluminum nitride layer and the compound semiconductor layer are amorphized.
4. The compound semiconductor device according to claim 1 , wherein a surface of the chip substrate has a recess along a scribe lane, and
the amorphous layer or the polycrystal layer is in direct contact with the recess.
5. The compound semiconductor device according to claim 1 , wherein the amorphous layer or the polycrystal layer contains at least one of silicon and aluminum.
6. The compound semiconductor device according to claim 1 , wherein the amorphous layer or the polycrystal layer contains silicon at not less than 1 at %.
7. The compound semiconductor device according to claim 1 , wherein the amorphous layer or the polycrystal layer has peaks and valleys with an average pitch of 0.05 μm to 1.0 μm on a surface of the amorphous layer or the polycrystal layer.
8. The compound semiconductor device according to claim 1 , wherein the chip substrate is made of any one selected from the group consisting of silicon, silicon carbide, and sapphire.
9. A resin-sealed type semiconductor device wherein the amorphous layer or the polycrystal layer of the compound semiconductor device according to claim 1 is in contact with a resin agent for assembly for one of the amorphous layer or the polycrystal layer to be under-filled or side-filled by mold resin sealing, incorporation into a component-incorporated substrate, or flip-chip mounting.
10. The compound semiconductor device according to claim 1 , wherein the compound semiconductor device is a power semiconductor device.
11. A compound semiconductor device comprising:
a chip substrate;
an aluminum nitride layer disposed above the chip substrate;
a lateral semiconductor element, in which electric current flows in parallel to the chip substrate; and
a compound semiconductor layer disposed between the aluminum nitride layer and the lateral semiconductor element,
wherein a part of the side of the chip substrate forms an inclined surface,
wherein an end face of the chip substrate is perpendicular to an upper surface of the chip substrate,
wherein the inclined surface extends to the end of the chip substrate, and
wherein a side of the aluminum nitride layer is covered by an amorphous layer or a polycrystal layer and is in direct contact with the amorphous layer or the polycrystal layer.
12. The compound semiconductor device according to claim 11 , wherein the amorphous layer or the polycrystal layer is a layer in which the aluminum nitride layer and the compound semiconductor layer are amorphized.
13. The compound semiconductor device according to claim 11 , wherein a surface of the chip substrate has a recess along a scribe lane, and
the amorphous layer or the polycrystal layer is in direct contact with the recess.
14. The compound semiconductor device according to claim 11 , wherein the amorphous layer or the polycrystal layer contains at least one of silicon and aluminum.
15. The compound semiconductor device according to claim 11 , wherein the amorphous layer or the polycrystal layer contains silicon at not less than 1 at %.
16. The compound semiconductor device according to claim 11 , wherein the amorphous layer or the polycrystal layer has peaks and valleys with an average pitch of 0.05 μm to 1.0 μm on a surface of the amorphous layer or the polycrystal layer.
17. The compound semiconductor device according to claim 11 , wherein the chip substrate is made of any one selected from the group consisting of silicon, silicon carbide, and sapphire.
18. A resin-sealed type semiconductor device wherein the amorphous layer or the polycrystal layer of the compound semiconductor device according to claim 11 is in contact with a resin agent for assembly for one of the amorphous layer or the polycrystal layer to be under-filled or side-filled by mold resin sealing, incorporation into a component-incorporated substrate, or flip-chip mounting.
19. The compound semiconductor device according to claim 11 , wherein the compound semiconductor device is a power semiconductor device.
20. A compound semiconductor device comprising:
a chip substrate as a base of a compound semiconductor chip;
an aluminum nitride layer disposed above the chip substrate; and
a compound semiconductor layer disposed above the aluminum nitride layer,
wherein a side of the aluminum nitride layer is covered by an amorphous layer or a polycrystal layer and is in direct contact with the amorphous layer or a polycrystal layer, and
a thickness, in a direction parallel to an upper surface of the chip substrate, of the amorphous layer or the polycrystal layer disposed on the side of the aluminum nitride layer is larger than a thickness of the compound semiconductor layer in a cross-sectional view.
21. The compound semiconductor device according to claim 20 , wherein the amorphous layer or the polycrystal layer is a layer in which the aluminum nitride layer and the compound semiconductor layer are amorphized.
22. The compound semiconductor device according to claim 20 , wherein a surface of the chip substrate has a recess along a scribe lane, and
the amorphous layer or the polycrystal layer is in direct contact with the recess.
23. The compound semiconductor device according to claim 20 , wherein the amorphous layer or the polycrystal layer contains at least one of silicon and aluminum.
24. The compound semiconductor device according to claim 20 , wherein the amorphous layer or the polycrystal layer contains silicon at not less than 1 at %.
25. The compound semiconductor device according to claim 20 , wherein the amorphous layer or the polycrystal layer has peaks and valleys with an average pitch of 0.05 μm to 1.0 μm on a surface of the amorphous layer or the polycrystal layer.
26. The compound semiconductor device according to claim 20 , wherein the chip substrate is made of any one selected from the group consisting of silicon, silicon carbide, and sapphire.
27. A resin-sealed type semiconductor device wherein the amorphous layer or the polycrystal layer of the compound semiconductor device according to claim 20 is in contact with a resin agent for assembly for one of the amorphous layer or the polycrystal layer to be under-filled or side-filled by mold resin sealing, incorporation into a component-incorporated substrate, or flip-chip mounting.
28. The compound semiconductor device according to claim 20 , wherein the compound semiconductor device is a power semiconductor device.