Patent Assignment
Reel/Frame 072853/0508
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2025-09-04
Received: 2025-09-04
Pages: 9
Assignor
INFINEON TECHNOLOGIES AUSTRIA AG
Executed: 2025-09-01
Assignee
PANASONIC HOLDINGS CORPORATION
1006, OAZA KADOMA, KADOMA-SHI, OSAKA, JPX, 571-8501, JAPAN
Covered Applications
(95)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
App. No. 19/051,539
→
DRIVER CIRCUIT AND SWITCH SYSTEM
App. No. 17/614,716
→
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
App. No. 17/190,261
→
CONTROL SYSTEM, SWITCH SYSTEM, POWER CONVERTER, METHOD FOR CONTROLLING BIDIRECTIONAL SWITCH ELEMENT, AND PROGRAM
App. No. 17/256,642
→
BIDIRECTIONAL SWITCH ELEMENT
App. No. 17/256,475
→
SEMICONDUCTOR DEVICE
App. No. 17/091,302
→
BIDIRECTIONAL SWITCH AND BIDIRECTIONAL SWITCH DEVICE INCLUDING THE SWITCH
App. No. 16/499,595
→
POWER-FACTOR CORRECTING CONVERTER
App. No. 16/455,615
→
SNUBBER CIRCUIT AND POWER CONVERSION SYSTEM INCLUDING SAME
App. No. 16/468,220
→
POWER CONVERSION SYSTEM
App. No. 16/341,387
→
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
App. No. 16/363,828
→
COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SAME, AND RESIN-SEALED TYPE SEMICONDUCTOR DEVICE
App. No. 16/245,125
→
BIDIRECTIONAL SWITCH
App. No. 16/125,174
→
SEMICONDUCTOR DEVICE
App. No. 15/873,438
→
COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SAME, AND RESIN-SEALED TYPE SEMICONDUCTOR DEVICE
App. No. 15/823,245
→
SEMICONDUCTOR DEVICE
App. No. 15/812,525
→
SEMICONDUCTOR DEVICE
App. No. 15/728,141
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 15/445,358
→
SEMICONDUCTOR DEVICE
App. No. 15/427,629
→
SEMICONDUCTOR DEVICE
App. No. 15/329,464
→
SEMICONDUCTOR DEVICE
App. No. 15/234,775
→
SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER STACKED BODY
App. No. 14/981,831
→
SEMICONDUCTOR APPARATUS
App. No. 14/938,803
→
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
App. No. 14/930,628
→
SEMICONDUCTOR DEVICE
App. No. 14/918,517
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 14/887,249
→
SEMICONDUCTOR DEVICE
App. No. 14/884,815
→
COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SAME, AND RESIN-SEALED TYPE SEMICONDUCTOR DEVICE
App. No. 14/880,975
→
HALF BRIDGE CIRCUIT, FULL BRIDGE CIRCUIT CONSTRUCTED WITH HALF BRIDGE CIRCUIT, AND THREE-PHASE INVERTER CIRCUIT CONSTRUCTED WITH HALF BRIDGE CIRCUIT
App. No. 14/800,739
→
FIELD-EFFECT TRANSISTOR
App. No. 14/790,064
→
SURGE PROTECTION ELEMENT AND SEMICONDUCTOR DEVICE
App. No. 14/744,083
→
SEMICONDUCTOR DEVICE
App. No. 14/702,061
→
SEMICONDUCTOR DEVICE
App. No. 14/663,140
→
NITRIDE SEMICONDUCTOR STRUCTURE
App. No. 14/636,163
→
SEMICONDUCTOR DEVICE
App. No. 14/636,149
→
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
App. No. 14/500,043
→
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
App. No. 14/301,066
→
SEMICONDUCTOR DEVICE
App. No. 14/165,405
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 14/152,681
→
Semiconductor Device Composed of AIGaInN Layers With Inactive Regions
App. No. 14/133,118
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 14/133,102
→
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 14/107,758
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
App. No. 14/104,710
→
SCHOTTKY DIODE
App. No. 14/059,379
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 13/975,085
→
MATRIX CONVERTER CONTROLLING APPARATUS
App. No. 13/910,419
→
NITRIDE SEMICONDUCTOR DEVICE WITH METAL LAYER FORMED ON ACTIVE REGION AND COUPLED WITH ELECTRODE INTERCONNECT
App. No. 13/733,827
→
DIODE WITH HETEROJUNCTION OF NITRIDE SEMICONDUCTOR LAYERS
App. No. 13/721,943
→
SEMICONDUCTOR DEVICE
App. No. 13/689,397
→
FIELD EFFECT TRANSISTOR
App. No. 13/676,740
→
FIELD-EFFECT TRANSISTOR WITH NITRIDE SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME
App. No. 13/569,014
→
BIDIRECTIONAL SWITCH
App. No. 13/463,631
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 13/402,631
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 13/360,275
→
SEMICONDUCTOR DEVICE
App. No. 13/231,514
→
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
App. No. 13/185,818
→
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE
App. No. 13/182,122
→
LOAD DRIVE CIRCUIT WITH CURRENT BIDIRECTIONAL DETECTING FUNCTION
App. No. 13/074,937
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 13/010,238
→
NITRIDE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD THEREOF
App. No. 12/963,510
→
NITRIDE SEMICONDUCTOR ELEMENT
App. No. 12/961,134
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 12/912,346
→
SEMICONDUCTOR DEVICE
App. No. 12/905,801
→
NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION
App. No. 12/903,505
→
FIELD-EFFECT TRANSISTOR
App. No. 12/880,704
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 12/879,565
→
SEMICONDUCTOR DEVICE FOR REDUCING AND/OR PREVENTING CURRENT COLLAPSE
App. No. 12/867,427
→
BIDIRECTIONAL SWITCH
App. No. 12/681,567
→
POWER CONVERSION CIRCUIT
App. No. 12/598,387
→
MOTOR DRIVING CIRCUIT
App. No. 12/596,770
→
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
App. No. 12/445,390
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 12/331,668
→
NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION
App. No. 12/023,461
→
BIDIRECTIONAL SWITCH AND METHOD FOR DRIVING THE SAME
App. No. 12/020,163
→
TRANSISTOR AND METHOD FOR OPERATING THE SAME
App. No. 11/995,040
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 11/952,407
→
TRANSISTOR FOR PREVENTING CURRENT COLLAPSE AND HAVING IMPROVED LEAKAGE CURRENT CHARACTERISTICS AND METHOD FOR FABRICATING THE SAME
App. No. 11/939,899
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 11/890,480
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 11/878,352
→
Semiconductor device and method for fabricating the same
App. No. 11/819,198
→
NITRIDE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD THEREOF
App. No. 11/738,655
→
SEMICONDUCTOR DEVICE
App. No. 11/681,408
→
FIELD-EFFECT TRANSISTOR
App. No. 11/709,690
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 11/647,218
→
TRANSISTOR
App. No. 11/600,102
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
App. No. 11/595,966
→
SEMICONDUCTOR DEVICE
App. No. 11/593,016
→
SEMICONDUCTOR DEVICE
App. No. 11/492,913
→
SAWING TILE CORNERS ON PROBE CARD SUBSTRATES
App. No. 11/455,110
→
FIELD-EFFECT TRANSISTOR WITH NITRIDE SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME
App. No. 11/433,734
→
SEMICONDUCTOR DEVICE
App. No. 11/325,340
→
SEMICONDUCTOR DEVICE
App. No. 11/293,144
→
SCHOTTKY BARRIER DIODE AND DIODE ARRAY
App. No. 11/272,878
→
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 11/193,417
→
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 10/970,026
→