Semiconductor device
View Patent ↗A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15 , a first gate electrode 17 , a second gate electrode 18 , and a second ohmic electrode 16 . The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43 . The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44 . A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.
1. A semiconductor device comprising:
a plurality of unit cells including a semiconductor layer formed on a substrate, and a first ohmic electrode, a first gate electrode, and a second ohmic electrode formed on the semiconductor layer, the first gate electrode being between the first ohmic electrode and the second ohmic electrode;
a first gate electrode pad electrically connected to the first gate electrode;
a first ohmic electrode pad electrically connected to the first ohmic electrode; and
a second ohmic electrode pad electrically connected to the second ohmic electrode, wherein
a portion of the first ohmic electrode and a portion of the second ohmic electrode are overlapped by the first ohmic electrode pad in plan view, and
a portion of the first ohmic electrode and a portion of the second ohmic electrode are overlapped by the second ohmic electrode pad in plan view.
2. The semiconductor device of claim 1 , further comprising:
a second gate electrode being between the first ohmic electrode and the second ohmic electrode; and
a second gate electrode pad electrically connected to the second gate electrode.
3. The semiconductor device of claim 2 , wherein,
a portion of the first gate electrode and a portion of the second gate electrode are overlapped by the first ohmic electrode pad in plan view, and
a portion of the first gate electrode and a portion of the second gate electrode are overlapped by the second ohmic electrode pad in plan view.
4. The semiconductor device of claim 1 , wherein
a portion of the first gate electrode is overlapped by the first gate electrode pad.
5. The semiconductor device of claim 2 , wherein
a portion of the first gate electrode is overlapped by the first gate electrode pad, and
a portion of the second gate electrode is overlapped by the second gate electrode pad.
6. The semiconductor device of claim 1 , wherein
the semiconductor layer has an active region and a high-resistance region surrounding the active region, and
at least a portion of the first and second ohmic electrode pads is formed on the active region.
7. The semiconductor device of claim 6 , wherein at least a portion of the first gate electrode pad is formed on the active region.
8. The semiconductor device of claim 1 , wherein
the semiconductor layer includes a first nitride semiconductor layer and a second nitride semiconductor layer having a larger band gap than that of the first nitride semiconductor layer,
the first and second nitride semiconductor layers being successively formed, and
the first nitride semiconductor layer being closer to the substrate than the second nitride semiconductor layer is.
9. The semiconductor device of claim 1 , wherein
a portion of the first ohmic electrode and a portion of the second ohmic electrode are overlapped by the first gate electrode pad in plan view.
10. The semiconductor device of claim 2 , wherein
a portion of the first ohmic electrode and a portion of the second ohmic electrode are overlapped by the first gate electrode pad in plan view.
11. The semiconductor device of claim 10 , wherein
a portion of the first ohmic electrode and a portion of the second ohmic electrode are overlapped by the second gate electrode pad in plan view.