Patent Assignment
Reel/Frame 069631/0392
CHANGE OF NAME
Recorded: 2024-12-13
Received: 2024-12-13
Pages: 8
Assignor
PANASONIC CORPORATION
Executed: 2022-04-01
Assignee
PANASONIC HOLDINGS CORPORATION
1006, OAZA KADOMA, KADOMA-SHI, OSAKA, JPX, 571-8501, JAPAN
Covered Applications
(49)
BIDIRECTIONAL SWITCH AND BIDIRECTIONAL SWITCH DEVICE INCLUDING THE SWITCH
App. No. 16/499,595
→
BIDIRECTIONAL SWITCH
App. No. 16/125,174
→
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
App. No. 14/301,066
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 14/152,681
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 13/975,085
→
MATRIX CONVERTER CONTROLLING APPARATUS
App. No. 13/910,419
→
NITRIDE SEMICONDUCTOR DEVICE WITH METAL LAYER FORMED ON ACTIVE REGION AND COUPLED WITH ELECTRODE INTERCONNECT
App. No. 13/733,827
→
DIODE WITH HETEROJUNCTION OF NITRIDE SEMICONDUCTOR LAYERS
App. No. 13/721,943
→
SEMICONDUCTOR DEVICE
App. No. 13/689,397
→
FIELD EFFECT TRANSISTOR
App. No. 13/676,740
→
FIELD-EFFECT TRANSISTOR WITH NITRIDE SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME
App. No. 13/569,014
→
BIDIRECTIONAL SWITCH
App. No. 13/463,631
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 13/402,631
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 13/360,275
→
SEMICONDUCTOR DEVICE
App. No. 13/231,514
→
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
App. No. 13/185,818
→
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE
App. No. 13/182,122
→
LOAD DRIVE CIRCUIT WITH CURRENT BIDIRECTIONAL DETECTING FUNCTION
App. No. 13/074,937
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 13/010,238
→
NITRIDE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD THEREOF
App. No. 12/963,510
→
NITRIDE SEMICONDUCTOR ELEMENT
App. No. 12/961,134
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 12/912,346
→
SEMICONDUCTOR DEVICE
App. No. 12/905,801
→
FIELD-EFFECT TRANSISTOR
App. No. 12/880,704
→
SEMICONDUCTOR DEVICE FOR REDUCING AND/OR PREVENTING CURRENT COLLAPSE
App. No. 12/867,427
→
BIDIRECTIONAL SWITCH
App. No. 12/681,567
→
POWER CONVERSION CIRCUIT
App. No. 12/598,387
→
MOTOR DRIVING CIRCUIT
App. No. 12/596,770
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 12/331,668
→
NITRIDE-BASED SEMICONDUCTOR DEVICE WITH CONCAVE GATE REGION
App. No. 12/023,461
→
BIDIRECTIONAL SWITCH AND METHOD FOR DRIVING THE SAME
App. No. 12/020,163
→
TRANSISTOR AND METHOD FOR OPERATING THE SAME
App. No. 11/995,040
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 11/952,407
→
TRANSISTOR FOR PREVENTING CURRENT COLLAPSE AND HAVING IMPROVED LEAKAGE CURRENT CHARACTERISTICS AND METHOD FOR FABRICATING THE SAME
App. No. 11/939,899
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 11/890,480
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 11/878,352
→
NITRIDE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD THEREOF
App. No. 11/738,655
→
SEMICONDUCTOR DEVICE
App. No. 11/681,408
→
FIELD-EFFECT TRANSISTOR
App. No. 11/709,690
→
NITRIDE SEMICONDUCTOR DEVICE
App. No. 11/647,218
→
TRANSISTOR
App. No. 11/600,102
→
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
App. No. 11/595,966
→
SEMICONDUCTOR DEVICE
App. No. 11/593,016
→
SEMICONDUCTOR DEVICE
App. No. 11/492,913
→
FIELD-EFFECT TRANSISTOR WITH NITRIDE SEMICONDUCTOR AND METHOD FOR FABRICATING THE SAME
App. No. 11/433,734
→
SEMICONDUCTOR DEVICE
App. No. 11/325,340
→
SEMICONDUCTOR DEVICE
App. No. 11/293,144
→
SCHOTTKY BARRIER DIODE AND DIODE ARRAY
App. No. 11/272,878
→
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
App. No. 11/193,417
→