IP Library Granted Patent US 8,159,848
Granted Patent B2
US 8,159,848 · App. 12/598,387 · Granted Apr 17, 2012

Power conversion circuit

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Quick Facts
Patent No.
US 8,159,848
App. No.
12/598,387
Granted
Apr 17, 2012
Kind
B2
Abstract

A power conversion circuit includes a bidirectional switch 2 . The bidirectional switch 2 has a first gate terminal G 1 , a second gate terminal G 2 , a first ohmic terminal S 1 and a second ohmic terminal S 2 . The bidirectional switch 2 has four operation states. In the first state, the bidirectional switch 2 operates as a diode having a cathode as the first ohmic terminal S 1 and an anode as the second ohmic terminal S 2 . In a second state, the bidirectional switch 2 operates as a diode having an anode as the first ohmic terminal S 1 and a cathode as the second ohmic terminal S 2 . In a third state, the bidirectional switch 2 is bidirectionally conductive with via a diode between the first and second ohmic terminals S 1 and S 2 . In a fourth state, the bidirectional switch 2 cuts off a bidirectional current between the first and second ohmic terminals.

Claims (28)

1. A power conversion circuit comprising:

at least one bidirectional switch,

wherein the bidirectional switch has a first gate terminal, a second gate terminal, a first ohmic terminal and a second ohmic terminal,

by causing the first gate terminal to be in the ON state and the second gate terminal to be in the OFF state, the bidirectional switch is caused to be in a first state in which the bidirectional switch operates as a diode having a cathode as the first ohmic terminal and an anode as the second ohmic terminal,

by causing the first gate terminal to be in the OFF state and the second gate terminal to be in the ON state, the bidirectional switch is caused to be in a second state in which the bidirectional switch operates as a diode having an anode as the first ohmic terminal e and a cathode as the second ohmic terminal,

by causing the first and second gate terminals to be in the ON state, the bidirectional switch is caused to be in a third state in which the bidirectional switch is bidirectionally conductive without via a diode between the first and second ohmic terminals, and

by causing the first and second gate terminals to be in the OFF state, the bidirectional switch is caused to be in a fourth state in which a bidirectional current is cut off between the first and second ohmic terminals.

2. The power conversion circuit of claim 1 , wherein

the bidirectional switch has

a semiconductor multilayer structure formed on a substrate;

a first ohmic electrode and a second ohmic electrode formed on the semiconductor multilayer structure with a space being provided therebetween;

a first p-type semiconductor layer and a second p-type semiconductor layer formed between the first and second ohmic electrodes with a space being provided therebetween;

a first gate electrode formed on the first p-type semiconductor layer; and

a second gate electrode formed on the second p-type semiconductor layer,

the semiconductor multilayer structure includes a first nitride semiconductor layer, and a second nitride semiconductor layer which is formed on the first nitride semiconductor layer and has a larger band gap than that of the first nitride semiconductor layer, and

the first gate electrode is connected to the first gate terminal, the second gate electrode is connected to the second gate terminal, the first ohmic electrode is connected to the first ohmic terminal, and the second ohmic electrode is connected to the second ohmic terminal.

3. The power conversion circuit of claim 1 , further comprising:

a unidirectional switch connected in series to the bidirectional switch; and

a diode connected antiparallel to the unidirectional switch,

wherein the bidirectional switch, the unidirectional switch and the diode constitute a first half-bridge circuit whose input or output is a connection node of the bidirectional switch and the unidirectional switch.

4. The power conversion circuit of claim 3 , wherein

the bidirectional switch is in the third state when a voltage at the connection node is higher than an output voltage of the first half-bridge circuit.

5. The power conversion circuit of claim 1 , wherein

the power conversion circuit includes multiple ones of the at least one bidirectional switch, and

two of the bidirectional switches are connected in series to constitute a second half-bridge circuit whose input or output is a connection node of the two bidirectional switches.

6. The power conversion circuit of claim 5 , wherein

when one of the two bidirectional switches is in the third state, the other bidirectional switch is in a state other than the third state, and

when one of the two bidirectional switches is in the fourth state, the other bidirectional switch is in a state other than the fourth state.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 4, 2025
From: INFINEON TECHNOLOGIES AUSTRIA AG
To: PANASONIC HOLDINGS CORPORATION
Reel/Frame 072853/0508 →
CHANGE OF NAME Recorded Dec 13, 2024
From: PANASONIC CORPORATION
To: PANASONIC HOLDINGS CORPORATION
Reel/Frame 069631/0392 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2009
From: MORIMOTO, ATSUSHI; SHIRAISHI, MATSUO; ISHIKAWA, KOUICHI; MORITA, TATSUO; UEMOTO, YASUHIRO; TANAKA, TSUYOSHI
To: PANASONIC CORPORATION
Reel/Frame 023647/0340 →