IP Library Granted Patent US 10,839,845
Granted Patent B2
US 10,839,845 · App. 16/506,835 · Granted Nov 17, 2020

Magnetic sensors with effectively shaped side shields

Inventors: Quang Le (San Jose, CA); Yongchul Ahn (San Jose, CA); Xiaoyong Liu (San Jose, CA); Jui-Lung Li (San Jose, CA); Hongquan Jiang (San Jose, CA)
Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
G11B5/6082G11B5/10G11B5/3163G11B5/3906G11B5/3909G11B5/3912G11B5/3932
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Quick Facts
Patent No.
US 10,839,845
App. No.
16/506,835
Granted
Nov 17, 2020
Kind
B2
Abstract

Magnetic sensors with effectively shaped side shields and their fabrication processes are provided. One such process includes depositing sensor materials on a substrate, shaping the sensor materials to form a stripe height of the magnetic sensor, shaping the sensor materials to form a track width of the magnetic sensor, depositing side shield materials on the shaped sensor materials, shaping the side shield materials such that a resulting side shield extends further than the stripe height, depositing an insulator layer on the shaped side shield materials, and shaping the insulator layer.

Claims (36)

1. A method of fabricating a magnetic sensor having an air bearing surface (ABS), comprising:

depositing sensor materials on a substrate;

shaping the sensor materials to form a stripe height of the magnetic sensor;

shaping the sensor materials to form a track width of the magnetic sensor;

depositing, after the shaping the sensor materials, side shield materials on the shaped sensor materials;

shaping the side shield materials such that a resulting side shield extends further from the ABS than the stripe height;

depositing an insulator layer on the shaped side shield materials; and

shaping the insulator layer.

2. The method of claim 1 , wherein the depositing and shaping of the side shield materials is performed after the shaping the sensor materials to form the track width.

3. The method of claim 1 , wherein the depositing and shaping of the side shield materials comprises:

depositing and patterning a resist;

depositing the side shield materials on the shaped sensor materials and on the resist;

depositing a mask on the side shield materials; and

removing the resist.

4. The method of claim 3 , wherein the removing the resist comprises removing the resist and portions of the side shield materials and of the mask previously deposited on the resist.

5. The method of claim 1 , wherein the shaping the insulator layer comprises shaping the insulator layer and further shaping the side shield materials.

6. The method of claim 1 :

wherein the depositing sensor materials on the substrate comprises depositing a pinned layer on the substrate; and

wherein the shaping the insulator layer comprises shaping the insulator layer and shaping the pinned layer.

7. The method of claim 1 , wherein the shaping the insulator layer comprises shaping the insulator layer such that the shaped side shield materials are disposed between the shaped insulator layer and the ABS.

8. The method of claim 1 , wherein the depositing and shaping of the insulator layer comprises:

depositing and patterning a resist;

depositing an insulator layer on the shaped side shield materials; and

removing the resist such that such that the shaped side shield materials are disposed between the shaped insulator layer and the ABS.

9. The method of claim 1 , wherein the sensor materials comprise:

materials for a pinned layer;

materials for a barrier layer; and

materials for a free layer.

10. The method of claim 1 , wherein the insulator layer comprises TaOx, where x is a positive integer.

11. The method of claim 1 , wherein the side shield comprises one or more materials selected from the group consisting of NiFe19, NiFe4, NiFe19/NiFe4, NiFe4/NiFe19, NiFe17Mo5, NiFe55, NiFe19/NiFeMo, NiFeMo/NiFe19, CoFe25, and combinations thereof.

12. The method of claim 1 , wherein the magnetic sensor is a sub-component of a reader selected from the group consisting of an antiparallel free layer (AP FL) type reader, a two dimensional shape enhanced pinning (2D SEP) type reader, a reduced interlayer coupling (Hf) type reader, and a scissor rear soft bias (SB) type reader.

13. The method of claim 1 , wherein the depositing the sensor materials on a substrate comprises:

depositing materials for a pinned layer on the substrate;

depositing materials for a barrier layer on the pinned layer; and

depositing materials for a free layer on the barrier layer, wherein the stripe height of the magnetic sensor is defined by a stripe height of the free layer.

14. The method of claim 13 , wherein a stripe height of the pinned layer is greater than the stripe height of the free layer.

Assignments (5)
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059127/0001 →
SECURITY INTEREST Recorded Feb 6, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052915/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2019
From: LE, QUANG; AHN, YONGCHUL; LIU, XIAOYONG; LI, JUI-LUNG; JIANG, HONGQUAN
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 049705/0360 →
Continuity (2)
Division 15870779 · Jan 12, 2018
Related Publication 20190333534A1 · Oct 31, 2019