Waveguide modulator structures
A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.
1. An active optical waveguide, comprising:
a central waveguide region composed of an active material;
a first vertical region on a first side of the central waveguide region, the first vertical region being at least partially doped;
a second vertical region on a second side of the central waveguide region, the second vertical region being at least partially doped;
a first doped lateral region adjacent to the first vertical region; and
a second doped lateral region adjacent to the second vertical region,
wherein:
the doping in the second vertical region is of an opposite sense to the doping in the first vertical region,
the doping in the second doped lateral region is of an opposite sense to the doping in the first doped lateral region,
a vertical extent of the doping in the first vertical region exceeds a height of any doping in the second vertical region, and
the active material is Ge or SiGe.
2. An active optical waveguide according to claim 1 , wherein the first vertical region is p-doped and the second doped lateral region is n-doped.
3. An active optical waveguide according to claim 1 , wherein the first vertical region is n-doped, and the second doped lateral region is p-doped.
4. An active optical waveguide according to claim 1 , further comprising:
at least one electrical contact on the first doped lateral region, and
at least one electrical contact on the second doped lateral region.
5. A system, comprising:
an optical device including an active optical waveguide according to claim 1 , and
a silicon waveguide,
wherein:
the active optical waveguide is located on a silicon on insulator (SOI) base, and
the optical device is connected to the silicon waveguide.
6. An optical device including an active optical waveguide according to claim 1 , wherein the optical device is an optical modulator.
7. An optical device including an active optical waveguide according to claim 1 , wherein the optical device is configured to give rise to a Franz-Keldysh (FK) effect in the active material in response to an application of an electric field to the central waveguide region, between the first vertical region and the second doped lateral region.
8. An active optical waveguide, comprising:
a central waveguide region composed of an active material;
a first vertical region on a first side of the central waveguide region, the first vertical region being at least partially doped;
a second vertical region on a second side of the central waveguide region, the second vertical region being at least partially doped;
a first doped lateral region adjacent to the first vertical region; and
a second doped lateral region adjacent to the second vertical region,
wherein:
the doping in the second vertical region is of an opposite sense to the doping in the first vertical region,
the doping in the second doped lateral region is of an opposite sense to the doping in the first doped lateral region,
the active material is Ge or SiGe,
the central waveguide region is intrinsically n-doped, and
a PN junction is formed within the central waveguide region between the first vertical region and the second doped lateral region.
9. An active optical waveguide comprising:
a central waveguide region made from an undoped or intrinsic semiconductor material;
a first doped semiconductor region on a first side of the central waveguide region; and
a second doped semiconductor region on a second side of the central waveguide region,
wherein:
the first and second sides of the central waveguide region are opposite one another,
the doping in the first doped semiconductor region is of an opposite sense to the doping in the second doped semiconductor region,
the first doped semiconductor region and the second doped semiconductor region are both composed of Ge or SiGe, and
the central waveguide region is composed of Ge or SiGe.
10. An active optical waveguide according to claim 9 , wherein:
the central waveguide region has a greater height than either of the first doped semiconductor region and the second doped semiconductor region, and
the central waveguide region is upstanding from the first doped semiconductor region and the second doped semiconductor region by a distance that is less than the height of the first doped semiconductor region or the second doped semiconductor region.
11. An active optical waveguide according to claim 9 , wherein the first doped semiconductor region and the second doped semiconductor region are both composed of Si.
12. A system, comprising:
an optical device including an active optical waveguide according to claim 9 , and
a silicon waveguide,
wherein:
the active optical waveguide is located on a silicon on insulator (SOI) base, and
the optical device is connected to the silicon waveguide.
13. An optical device including an active optical waveguide according to claim 9 , wherein the optical device is an optical modulator.
14. An optical device including an active optical waveguide according to claim 9 , wherein the optical device is configured to give rise to a Franz-Keldysh (FK) effect in the central waveguide region in response to an application of an electric field to the central waveguide region, between the first doped semiconductor region and the second doped semiconductor region.
15. An active optical waveguide comprising:
a central waveguide region made from an undoped or intrinsic semiconductor material;
a p-doped semiconductor region on a first side of the central waveguide region;
an n-doped semiconductor region on a second side of the central waveguide region;
an intervening lightly p-doped semiconductor region located between the p-doped semiconductor region and the central waveguide region; and
an intervening lightly n-doped semiconductor region located between the n-doped semiconductor region and the central waveguide region,
wherein:
the first and second sides of the central waveguide region are opposite one another,
the central waveguide region is composed of Ge or SiGe,
the p-doped semiconductor region, the n-doped semiconductor region, and the central waveguide region together form a PIN junction,
the intervening lightly p-doped semiconductor region has a lower dopant concentration than the p-doped semiconductor region, and
the intervening lightly n-doped semiconductor region has a lower dopant concentration than the n-doped semiconductor region.
16. An active optical waveguide according to claim 15 , wherein the n-doped semiconductor region, the p-doped semiconductor region, the intervening lightly p-doped semiconductor region, and the intervening lightly n-doped semiconductor region are all composed of Ge or SiGe.
17. A system, comprising:
a silicon-on-insulator chip, and
an optoelectronic device,
wherein the silicon-on-insulator chip comprises:
a substrate,
an insulating layer, on the substrate, and
a silicon layer on the insulating layer; and
wherein:
the optoelectronic device comprises a portion of an optical waveguide, the optical waveguide comprising a rib extending upwards from a surrounding slab;
the rib has a first sidewall, and a second sidewall parallel to the first sidewall;
the rib includes a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type;
the second region has:
a first portion parallel to and extending to the first sidewall, and
a second portion parallel to the second sidewall;
the first region extends between the first portion of the second region and the second portion of the second region; and
the optoelectronic device is a substrate-based optoelectronic device on the substrate.
18. The system of claim 17 , wherein:
the rib further includes a third region of the first conductivity type;
the third region is parallel to and extends to the second sidewall; and
the second portion of the second region is between the first region and the third region.