Method of forming a TVS semiconductor device

1. A method of forming a transient voltage suppressor (TVS) semiconductor device comprising:

forming a P-N diode connected in parallel between a collector and an emitter of a bipolar transistor wherein a base of the bipolar transistor is floating and not directly connected externally to the bipolar transistor; and

forming a thickness of a first current carrying electrode of the P-N diode to be greater than a total thickness of the base of the bipolar transistor wherein a reverse breakdown voltage of the P-N diode is to be greater than an open base collector-to-emitter breakdown voltage of the bipolar transistor (BVeco).

2. The method of claim 1 including forming an anode of the P-N diode commonly connected to one of the collector or the emitter of the bipolar transistor and to a first terminal of the TVS semiconductor device, and forming a cathode of the P-N diode commonly connected to a different one of the collector or the emitter of the bipolar transistor and to a second terminal of the TVS semiconductor device.

3. The method of claim 1 including forming an anode of the P-N diode commonly connected to the emitter of the bipolar transistor and to a first terminal of the TVS semiconductor device, and forming a cathode of the P-N diode commonly connected to the collector of the bipolar transistor and to a second terminal of the TVS semiconductor device.

4. The method of claim 1 including forming at least a portion of the P-N diode and at least a portion of the bipolar transistor in a semiconductor region having a first conductivity type that is overlying a substrate of a second conductivity type, wherein the portion of the P-N diode is a first portion of the semiconductor region and the portion of the bipolar transistor is a second portion of the semiconductor region that is isolated from the first portion of the semiconductor region.

5. The method of claim 1 further including forming a semiconductor region having a first conductivity type including forming the semiconductor region overlying a substrate of a second conductivity type;

forming the first current carrying electrode of the P-N diode as a first portion of the semiconductor region; and

forming the base of the bipolar transistor as a second portion of the semiconductor region.

6. The method of claim 5 further including forming an isolation region between the first portion of the semiconductor region and the second portion of the semiconductor region.

7. The method of claim 1 further including forming the base to be a first portion of a first doped region that has a first conductivity type and forming the first current carrying electrode to be a second portion of the first doped region.

8. A method of forming a transient voltage suppressor (TVS) semiconductor device comprising:

forming a P-N diode connected in parallel between a collector and an emitter of a bipolar transistor wherein a base of the bipolar transistor is floating and not directly connected externally to the bipolar transistor; and

forming a thickness of a first current carrying electrode of the P-N diode to be greater than a thickness of the base of the bipolar transistor including forming the base as a first doped region having a first doping concentration and forming the emitter as a second doped region having a second doping concentration that is less than the first doping concentration wherein the second doped region overlies the first doped region wherein a reverse breakdown voltage of the P-N diode is to be greater than an open base collector-to-emitter breakdown voltage of the bipolar transistor (BVeco).

9. A method of forming a transient voltage suppressor (TVS) semiconductor device comprising:

providing a substrate of a first conductivity type;

forming a doped region of a second conductivity type on the substrate;

forming at least a portion of a bipolar transistor in a first portion of the doped region wherein a base of the bipolar transistor is floating and not directly connected externally to the bipolar transistor, and wherein a collector-base junction of the bipolar transistor is formed at an interface between the substrate and the first portion of the doped region;

forming a least a portion of a diode in a second portion of the doped region wherein a total thickness of the second portion is substantially the same as a total thickness of the first portion, and wherein a P-N junction of the diode is formed at an interface between the substrate and the second portion of the doped region; and

forming the diode connected in parallel between a collector and an emitter of the bipolar transistor.

10. The method of claim 9 further including forming a first doping concentration of the first portion of the doped region to be substantially the same as a second doping concentration of the second portion of the doped region.