Photodetector with buried airgap reflectors
The present disclosure relates to semiconductor structures and, more particularly, to photodetectors with buried airgap mirror reflectors. The structure includes a photodetector and at least one airgap in a substrate under the photodetector.
1. A structure comprising:
a photodetector; and
at least one airgap in a substrate under the photodetector,
wherein the at least one airgap comprises a plurality of separated sealed airgaps, and
each of the plurality of separated sealed airgaps is fully separated from remaining separated sealed airgaps of the plurality of separated sealed airgaps by a wall region.
2. The structure of claim 1 , wherein the at least one airgap includes a curved surface which reflects light which passes through the photodetector back to a lower surface of the photodetector.
3. The structure of claim 2 , wherein the at least one airgap is plugged with a plurality of plugs within respective trenches that extend from a surface of the substrate, under the photodetector, to the at least one airgap.
4. The structure of claim 2 , wherein the at least one airgap is plugged with a single plug within a trench that extends from a surface of the substrate, under the photodetector, to the at least one air gap.
5. The structure of claim 2 , wherein the curved surface is coated with a reflective coating.
6. The structure of claim 2 , wherein the at least one airgap is sealed with a SiGe plug, and an entire surface of the plurality of separated sealed airgaps is coated with a reflective coating.
7. The structure of claim 1 , wherein the at least one airgap includes a plurality of curved surface which reflect light which passes through the photodetector back to a lower surface of the photodetector.
8. The structure of claim 7 , wherein the at least one airgap is plugged with a plurality of plugs within respective trenches that extend from a surface of the substrate, under the photodetector, to the at least one airgap.
9. The structure of claim 1 , wherein each of the plurality of separated sealed airgaps comprises a spherical lower surface with a spherical radius and focal point configured to reflect light which passes through the photodetector back to a lower surface of the photodetector.
10. The structure of claim 1 , further comprising a layer located between an upper portion of the substrate where the photodetector is located and a lower portion of the substrate where the at least one airgap is located, and an n-type contact region extends through the layer and into the upper portion of the substrate.
11. The structure of claim 1 , wherein a width of the at least one airgap is greater than a width or diameter of the photodetector.
12. The structure of claim 1 , wherein the photodetector is comprised of Ge material.
13. A structure comprising:
a photodetector; and
an airgap located under the photodetector, the airgap comprising a lower spherical reflective surface which is configured to reflect light back to the photodetector,
wherein the airgap is plugged with an epitaxial semiconductor material comprising SiGe, and the photodetector is above the epitaxial semiconductor material.
14. The structure of claim 13 , wherein the airgap comprises a plurality of separated sealed airgaps, and each of the plurality of separated sealed airgaps is fully separated from remaining separated sealed airgaps of the airgap by a wall region, an n-type contact region extends through the epitaxial semiconductor material and into an upper portion of a substrate under the photodetector, and the epitaxial semiconductor material is located between the upper portion of the substrate where the photodetector is located and a lower portion of the substrate where the airgap is located.
15. The structure of claim 14 , wherein each of the plurality of separated sealed airgaps comprises the lower spherical reflective surface configured to reflect light back to the photodetector, and an entire surface of the plurality of separated sealed airgaps is coated with a reflective coating.
16. The structure of claim 14 , wherein each of the plurality of separated sealed airgaps includes the lower spherical reflective surface and is plugged with the epitaxial semiconductor material comprising SiGe.
17. The structure of claim 13 , further comprising shallow trench isolation (STI) regions on sides of the photodetector and above the epitaxial semiconductor material.
18. The structure of claim 13 , wherein the lower spherical reflective surface is coated with a reflective material.
19. The structure of claim 18 , wherein the reflective material is indium oxide or zinc oxide.
20. A method comprising:
forming at least one cavity in a substrate and which has a bottom curved surface;
plugging the at least one cavity to form at least one airgap with the bottom curved surface; and
forming a photodetector above the substrate and over the at least one airgap,
wherein the at least one airgap comprises a plurality of separated sealed airgaps, and
each of the plurality of separated sealed airgaps is fully separated from remaining separated sealed airgaps of the plurality of separated sealed airgaps by a wall region.