Avalanche photodiode
The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.
1. A structure, comprising:
a substrate material having a trench with sidewalls and a bottom;
a first semiconductor material lining the sidewalls and the bottom of the trench;
a photosensitive semiconductor material provided on the first semiconductor material; and
a second semiconductor material comprising a plug in a center of the photosensitive semiconductor material and extending onto a top surface of the photosensitive semiconductor material.
2. The structure of claim 1 , further comprising isolation structures comprising oxide material extending into the substrate material and surrounding the trench, remote from the photosensitive semiconductor material and the oxide material being spaced away from the photosensitive semiconductor material and the second semiconductor material.
3. The structure of claim 1 , further comprising isolation structures comprising reflective material that reflects photons into the first semiconductor material lining the sidewalls and the bottom of the trench.
4. The structure of claim 1 , wherein the photosensitive semiconductor material comprises intrinsic material and the second semiconductor material extends only partially onto the top surface of the photosensitive semiconductor material.
5. The structure of claim 4 , therein the intrinsic material comprises undoped Ge material and the second semiconductor material is spaced away from an edge of the trench and the substrate material.
6. The structure of claim 4 , wherein the substrate material comprises N-type semiconductor material, and the first semiconductor material and the second semiconductor material comprise P-type semiconductor material.
7. The structure of claim 6 , wherein the second semiconductor material comprises a P+ plug to bias operation of an avalanche photodiode.
8. The structure of claim 7 , further comprising a semiconductor material on the P+ plug and a masking material over the semiconductor material to prevent silicide formation on the P+ plug.
9. The structure of claim 8 , wherein the P+ plug comprises unsilicided material and a contact is formed on a side of the trench, electrically contacting the substrate to detect a signal.
10. The structure of claim 7 , further comprising silicide and a contact on the P+ plug.
11. The structure of claim 3 , further comprising a third semiconductor material on the second semiconductor material, all of which are within the trench, wherein the substrate material, the first semiconductor material and the second semiconductor material comprise P-type materials and the third material comprises N-type material.
12. The structure of claim 11 , further comprising a silicide contact and a contact in electrical connection to the N-type semiconductor material.
13. A structure, comprising:
a semiconductor substrate;
a trench formed in the semiconductor substrate, the trench having sidewalls and a bottom;
a semiconductor material having a first dopant type which lines the sidewalls and the bottom of the trench;
an intrinsic photosensitive semiconductor material contacting the semiconductor material;
a second semiconductor material having the first dopant type and which is in the trench and contacting the intrinsic photosensitive semiconductor material; and
an isolation structure comprising reflective material surrounding the trench, and remotely positioned from the intrinsic photosensitive semiconductor material,
wherein the intrinsic photosensitive semiconductor material comprises undoped Ge material and the second semiconductor material is a plug comprising sidewalls and a bottom surface that are in contact and surrounded by the intrinsic photosensitive semiconductor material, and outer sidewalls of the intrinsic photosensitive semiconductor material are devoid of the second semiconductor material.
14. The structure of claim 13 , wherein the semiconductor substrate comprises N-type material and the first dopant type comprises P-type material, and further comprising a masking material over the second semiconductor material to prevent silicide formation on the second semiconductor material.
15. The structure of claim 13 , wherein the semiconductor substrate comprises N-type material and the first dopant type comprises P-type material, and further comprising a silicide contact directly on the second semiconductor material.
16. The structure of claim 13 , further comprising a N-type semiconductor material directly on the second semiconductor material within the trench, wherein the semiconductor material and the second semiconductor material are P-type materials and the intrinsic photosensitive semiconductor material comprises undoped Ge material.
17. The structure of claim 13 , further comprising a silicide contact and a contact in electrical connection to the semiconductor material, wherein the isolation structure comprises oxide material, and the second semiconductor material is only partially on a top surface of the intrinsic photosensitive semiconductor material such that it is not contacting the isolation structure and is separated by the isolation structure.
18. The structure of claim 13 , wherein the trench is circular or quadrilateral in cross section.
19. A method comprising:
forming a trench in a substrate;
providing a liner of semiconductor material on sidewalls and a bottom of the trench;
forming an undoped photosensitive material on the semiconductor material partially within the trench;
forming a second semiconductor material on the undoped photosensitive material filling a remaining portion of the trench, wherein the second semiconductor material is formed partially on a top surface of the undoped photosensitive material on an outside of the trench; and
forming trench structures with reflective oxide based material in the substrate adjacent to the liner of the semiconductor material and remote from the second semiconductor material
wherein the undoped photosensitive material comprises undoped Ge material and the second semiconductor material is a plug comprising sidewalls and a bottom surface that are formed in contact and surrounded by the undoped photosensitive material, and outer sidewalls of the undoped photosensitive material are devoid of the second semiconductor material.