Edge couplers with stacked layering
Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core, and a shaped layer is positioned over a portion of the waveguide core. The waveguide core is comprised of a first material, and the shaped layer is comprised of a second material different in composition from the first material. The first material may be, for example, single-crystal silicon, and the second material may be, for example, silicon nitride.
1. A structure comprising:
a substrate;
a first dielectric layer on the substrate;
an edge coupler including a waveguide core positioned over the first dielectric layer, the waveguide core comprised of single-crystal silicon, the waveguide core including a first inverse taper and a second inverse taper directly connected to the first inverse taper, and the first inverse taper and the second inverse taper of the waveguide core tapering in a first direction along a longitudinal axis of the waveguide core;
a shaped layer including a rectangular section positioned directly over the first inverse taper of the waveguide core and a tapered section positioned directly over the second inverse taper of the waveguide core, the shaped layer comprised of silicon nitride, and the tapered section of the shaped layer tapering in a second direction along the longitudinal axis opposite to the first direction;
a second dielectric layer positioned between the waveguide core and the shaped layer; and
a third dielectric layer over the shaped layer,
wherein the shaped layer is located on the second dielectric layer, and the shaped layer is embedded in the third dielectric layer.
2. The structure of claim 1 wherein the waveguide core includes an end surface, and the first inverse taper extends to the end surface.
3. The structure of claim 2 wherein the rectangular section includes a first side surface and a second side surface opposite to the first side surface, the first inverse taper includes a first side surface and a second side surface opposite to the first side surface, and the first side surface and the second side surface of the first inverse taper are laterally positioned between the first side surface of the rectangular section and the second side surface of the rectangular section.
4. The structure of claim 1 further comprising:
a laser,
wherein the first inverse taper is terminated by an end surface, and the end surface of the first inverse taper is positioned adjacent to the laser.
5. A method comprising:
providing a substrate and a first dielectric layer on the substrate;
forming an edge coupler including a waveguide core positioned over the first dielectric layer, wherein the waveguide core includes a first inverse taper and a second inverse taper directly connected to the first inverse taper, and the first inverse taper and the second inverse taper of the waveguide core taper in a first direction along a longitudinal axis of the waveguide core;
forming a shaped layer including a rectangular section positioned directly over the first inverse taper of the waveguide core and a tapered section positioned directly over the second inverse taper of the waveguide core, wherein the tapered section of the shaped layer tapers in a second direction along the longitudinal axis opposite to the first direction;
forming a second dielectric layer, wherein the second dielectric layer is positioned between the waveguide core and the shaped layer; and
forming a third dielectric layer over the shaped layer,
wherein the shaped layer is located on the second dielectric layer, the shaped layer is embedded in the third dielectric layer, the waveguide core is comprised of single-crystal silicon, and the shaped layer is comprised of silicon nitride.
6. The method of claim 5 wherein forming the shaped layer including the rectangular section positioned directly over the first inverse taper of the waveguide core and the tapered section positioned directly over the second inverse taper of the waveguide core comprises:
depositing a layer containing the silicon nitride; and
patterning the layer to form the shaped layer with a plurality of surfaces defining the rectangular section and the tapered section.
7. The method of claim 5 wherein the first dielectric layer is an oxide layer, the substrate is comprised of single-crystal silicon, the second dielectric layer is silicon dioxide, and the third dielectric layer is silicon dioxide.