Waveguide mirror and method of fabricating a waveguide mirror
A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and applying a metal coating to the underside surface.
1. A silicon photonic mirror comprising:
a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer;
a cavity extending through the silicon device layer, the BOX layer and a region of the silicon support layer, the walls of the cavity including:
a planar underside surface defined by an overhanging portion of the silicon device layer, the planar underside surface being for vertically coupling light into and out of the silicon device layer, and
an angled surface in the silicon support layer; and
a metal surface applied to the planar underside surface.
2. The silicon photonic mirror of claim 1 , wherein the planar underside surface forms an angle of 54.7 degrees relative to a top surface of the silicon device layer.
3. The silicon photonic mirror of claim 1 , wherein the walls of the cavity include no more than one overhanging portion of the silicon device layer.
4. A method of fabricating a mirror, the method comprising:
providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising: a silicon device layer on top of a BOX layer;
creating a V-groove in the silicon device layer, the V-groove extending to the BOX layer and having a first angled wall and a second angled wall;
providing a reflective coating to just one of the first and second angled walls of the V-groove to create a mirrored surface, the reflective coating comprising a metal layer; and
growing silicon on top of the reflective coating to fill the V-groove, an interface between the grown silicon and the reflective coating forming a reflective surface of the mirror.
5. The method of claim 4 , wherein the step of creating the V-groove includes:
an initial step of providing an opening in an oxide layer, the oxide layer located directly on top of the silicon device layer; and
a subsequent step of applying an anisotropic etch to the silicon device layer via the opening.
6. The method of claim 4 , wherein the reflective coating further comprises an oxide layer.
7. The method of claim 4 , wherein the silicon grown to fill the V-groove is epitaxial silicon.
8. The method of claim 4 , wherein the silicon grown to fill the V-groove is poly-silicon or amorphous silicon.
9. The method of claim 4 , further comprising the step of applying a nitride layer on top of the silicon that has been grown to fill the V-groove.
10. A silicon photonic mirror comprising:
a silicon device layer on top of a BOX layer;
a V-groove within the silicon device layer, the V-groove extending to the BOX layer and having a first angled wall and a second angled wall;
a reflective coating on no more than one of the first and second angled walls of the V-groove and comprising a metal layer; and
silicon on top of the reflective coating which fills the V-groove, an interface between the silicon and the reflective coating forming a reflective surface of the mirror.
11. The silicon photonic mirror of claim 10 , wherein the reflective coating further comprises an oxide layer.
12. The silicon photonic mirror of claim 10 , wherein the silicon which fills the V-groove is epitaxial silicon.
13. The silicon photonic mirror of claim 10 , wherein the silicon which fills the V-groove is poly-silicon or amorphous silicon.
14. The silicon photonic mirror of claim 10 , further comprising a nitride layer on top of the silicon that has been grown to fill the V-groove.
15. The silicon photonic mirror of claim 11 , wherein the reflective surface is a first reflective surface, and the interface is a first interface between the silicon filling the V-groove and the oxide layer, and
wherein a second interface between the oxide layer and the metal layer forms a second reflective surface of the mirror.
16. The silicon photonic mirror of claim 10 , wherein the silicon which fills the V-groove is grown silicon.
17. A silicon photonic mirror comprising:
a silicon device layer on top of a BOX layer;
a V-groove within the silicon device layer, the V-groove extending to the BOX layer and having a first angled wall and a second angled wall;
a reflective coating on no more than one of the first and second angled walls of the V-groove;
silicon on top of the reflective coating which fills the V-groove, an interface between the silicon filling the V-groove and the reflective coating forming a reflective surface of the mirror; and
a nitride layer on top of, and overlapping, the silicon filling the V-groove, and wherein the reflective coating comprises a metal layer, an oxide layer, or both a metal layer and an oxide layer on the metal layer.
18. The silicon photonic mirror of claim 17 , wherein the silicon which fills the V-groove is epitaxial silicon.
19. The silicon photonic mirror of claim 17 , wherein the silicon which fills the V-groove is poly-silicon or amorphous silicon.