VOLTAGE THRESHOLD SENSING SYSTEMS AND RELATED METHODS
Implementations of voltage sensing systems may include: a high side current mirror coupled to a reference current source coupled to at least one diode. The at least one diode may be coupled to a resistor and to a comparator. The resistor may be coupled to the ground. The comparator may be coupled with a reference voltage. The comparator may be configured to receive a comparison voltage from the diode and output whether the comparison voltage is higher or lower than the reference voltage.
1 . A voltage sensing system comprising:
a high side current mirror coupled to a reference current source coupled to a Zener diode, the Zener diode coupled to a resistor and to a comparator;
wherein the resistor is coupled to ground; and
wherein the comparator is coupled with a reference voltage and configured to receive a comparison voltage from the Zener diode and to output whether the comparison voltage is higher or lower than the reference voltage.
2 . The system of claim 1 , wherein the current mirror further comprises two p-channel metal-oxide-semiconductor field-effect (PMOS) transistors coupled together.
3 . The system of claim 2 , wherein a gate of each of the two PMOS transistors are coupled to a drain of one of the two PMOS transistors.
4 . The system of claim 1 , further comprising a second comparator coupled with a second reference voltage and configured to receive a second comparison voltage from the Zener diode and output whether the comparison voltage is higher or lower than the reference voltage.
5 . The system of claim 1 , further comprising a second resistor coupled between the current mirror and the comparator.
6 . A voltage threshold sensing system comprising:
two p-channel metal-oxide-semiconductor field-effect (PMOS) transistors coupled together, gates of the two PMOS transistors coupled to a drain of a first one of the two PMOS transistors, the drain of the first one of the two PMOS transistors coupled with a first constant current source, and a drain of a second one of the two PMOS transistors coupled to a diode; and
two n-channel metal-oxide-semiconductor field-effect (NMOS) transistors coupled together, gates of the two NMOS transistors coupled to the drain of a first one of the two NMOS transistors, the drain of the first one of the two NMOS transistors coupled with a second constant current source, and a drain of a second one of the two NMOS transistors coupled to the diode;
wherein the diode is coupled with an input of a comparator; and
wherein the comparator is configured to determine whether a supply voltage coupled to the first two PMOS transistors is above or below a reference voltage coupled to another input of the comparator.
7 . The system of claim 6 , wherein the diode is a Zener diode.
8 . The system of claim 6 , further comprising a second comparator coupled with a second reference voltage and configured to receive a second comparison voltage from the diode and output whether the comparison voltage is higher or lower than the reference voltage.
9 . The system of claim 6 , further comprising a fifth transistor coupled between one of the two NMOS transistors and the comparator.
10 . The system of claim 9 , wherein the fifth transistor is an NMOS transistor.
11 . A voltage threshold sensing system comprising:
two p-channel metal-oxide-semiconductor field-effect (PMOS) transistors coupled together, the two PMOS transistors coupled with a first constant current source and with a diode; and
two n-channel metal-oxide-semiconductor field-effect (NMOS) transistors coupled together, the two NMOS transistors coupled with a second constant current source and with the diode;
wherein the diode is coupled with an input of a comparator; and
wherein the comparator is configured to determine whether a supply voltage coupled to the first two PMOS transistors is above or below a reference voltage coupled to another input of the comparator.
12 . The system of claim 11 , wherein a drain of a first one of the two PMOS transistors is coupled with the first constant current source.
13 . The system of claim 11 , wherein a drain of a first one of the two NMOS transistors is coupled with the second constant current source.
14 . The system of claim 11 , wherein a drain of a second one of the two PMOS transistors is coupled to the diode.
15 . The system of claim 11 , wherein a drain of a second one of the two NMOS transistors is coupled to the diode.
16 . The system of claim 11 , wherein gates of the two PMOS transistors are coupled to a drain of a first one of the two PMOS transistors.
17 . The system of claim 11 , wherein gates of the two NMOS transistors are coupled to a drain of a first one of the two NMOS transistors.
18 . The system of claim 11 , wherein the diode is a Zener diode.
19 . The system of claim 11 , further comprising a second comparator coupled with a second reference voltage and configured to receive a second comparison voltage from the diode and output whether the comparison voltage is higher or lower than the reference voltage.
20 . The system of claim 11 , further comprising an NMOS transistor coupled between a source of one of the two NMOS transistors and the comparator.