EMI shielding for flip chip package with exposed die backside
A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over the semiconductor die;
a first shielding layer formed on the semiconductor die;
a second shielding layer formed on a side surface of the semiconductor die between the encapsulant and the semiconductor die; and
a solder layer formed over the first shielding layer.
2. The semiconductor device of claim 1 , wherein the semiconductor die is electrically connected to the first shielding layer.
3. The semiconductor device of claim 1 , wherein the first shielding layer physically contacts the semiconductor die.
4. The semiconductor device of claim 3 , wherein the first shielding layer includes a stainless steel layer that physically contacts the semiconductor die.
5. The semiconductor device of claim 1 , further including a heatsink disposed over the solder layer.
6. A semiconductor device, comprising:
a semiconductor die;
an encapsulant deposited over the semiconductor die, wherein a surface of the semiconductor die is coplanar to a surface of the encapsulant;
a first shielding layer formed over the semiconductor die and encapsulant, wherein a portion of the surface of the encapsulant is exposed from the first shielding layer; and
a solder layer formed over the first shielding layer.
7. The semiconductor device of claim 6 , wherein the first shielding layer includes a plurality of layers.
8. The semiconductor device of claim 6 , wherein a surface of the semiconductor die is coplanar with a surface of the encapsulant.
9. The semiconductor device of claim 8 , wherein the first shielding layer is formed directly on the surface of the semiconductor die and the surface of the encapsulant.
10. The semiconductor device of claim 6 , further including a heatsink disposed over the solder layer.
11. The semiconductor device of claim 10 , wherein the heatsink is bonded to the first shielding layer by the solder layer.
12. The semiconductor device of claim 6 , further including a second shielding layer formed between the semiconductor die and encapsulant.
13. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die with the semiconductor die exposed from the encapsulant;
forming a first shielding layer over the semiconductor die and encapsulant;forming a second shielding layer on the semiconductor die prior to depositing the encapsulant and
depositing a solder layer over the first shielding layer.
14. The method of claim 13 , further including depositing the solder layer by:
forming a mask on the first shielding layer;
depositing the solder layer on the first shielding layer after forming the mask;
removing the mask after depositing the solder layer; and
reflowing the solder layer after removing the mask.
15. The method of claim 14 , further including:
forming a plurality of openings in the mask; and
depositing the solder layer into the openings of the mask.
16. The method of claim 13 , further including forming a second shielding layer on the semiconductor die prior to depositing the encapsulant.
17. The method of claim 13 , further including bonding a heatsink to the first shielding layer using the solder layer.
18. The method of claim 13 , further including forming the first shielding layer directly on the semiconductor die.
19. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming a first shielding layer over the semiconductor die and encapsulant;
removing a portion of the first shielding layer outside a footprint of the semiconductor die; and
depositing a solder layer over the first shielding layer.
20. The method of claim 19 , further including forming the first shielding layer directly on the semiconductor die.
21. The method of claim 19 , further including forming the first shielding layer as a plurality of layers.
22. The method of claim 19 , further including forming a second shielding layer on the semiconductor die prior to depositing the encapsulant.
23. The method of claim 22 , further including forming the first shielding layer physically contacting the second shielding layer.