Global shutter sensor systems and related methods
Implementations of a semiconductor device may include a photodiode included in a second epitaxial layer of a semiconductor substrate; light shield coupled over the photodiode; and a first epitaxial layer located in one or more openings in the light shield. The first epitaxial layer and the second epitaxial layer may form a single crystal.
1. A semiconductor device comprising:
a photodiode comprised in a second epitaxial layer of a semiconductor substrate;
a light shield coupled over the photodiode; and
a first epitaxial layer located in one or more openings in the light shield;
wherein the first epitaxial layer and the second epitaxial layer form a single crystal.
2. The device of claim 1 , wherein the photodiode is a deep photodiode.
3. The device of claim 1 , wherein the light shield is comprised of a dielectric and a metal.
4. The device of claim 3 , wherein the metal of the light shield is encapsulated in an oxide.
5. The device of claim 1 , further comprising a memory element comprised in the first epitaxial layer.
6. The device of claim 1 , further comprising a vertical transfer gate electrically and physically coupled with the photodiode.
7. The device of claim 2 , further comprising a shallow photodiode electrically and mechanically coupled with the deep photodiode, wherein a width of the shallow photodiode is less than a width of the deep photodiode.
8. A semiconductor device comprising:
a first epitaxial layer comprising in-pixel circuits and a plurality of shallow photodiodes;
an opaque light shield formed on the first epitaxial layer, the opaque light shield comprising one or more openings; and
a second epitaxial layer located in the one or more openings in the opaque light shield, the second epitaxial layer comprising a plurality of deep photodiodes;
wherein the first epitaxial layer is coupled over a surface of the opaque light shield facing a front side of the semiconductor device.
9. The device of claim 8 , wherein the opaque light shield is recessed in the second epitaxial layer.
10. The device of claim 8 , wherein the first epitaxial layer and the second epitaxial layer are a single crystal.
11. The device of claim 8 , wherein the in-pixel circuits comprise one or more of a storage gate, a storage diode, and a storage capacitor.
12. The device of claim 8 , further comprising a vertical transfer gate electrically and physically coupled with the plurality of deep photodiodes.
13. The device of claim 8 , wherein the plurality of shallow photodiodes is electrically and physically coupled with the plurality of deep photodiodes.
14. The device of claim 8 , wherein the opaque light shield is between a portion of the first epitaxial layer and a portion of the second epitaxial layer, wherein the portion of the first epitaxial layer is directly over the portion of the second epitaxial layer.
15. The device of claim 8 , wherein a width of an entire shallow photodiode of the plurality of shallow photodiodes is less than a width of a deep photodiode of the plurality of deep photodiodes and wherein the width of the entire shallow photodiode fits within a width of an opening of the one or more openings in the opaque light shield.
16. A semiconductor device comprising:
a photodiode comprised in a second epitaxial layer of a semiconductor substrate;
a light shield coupled over the photodiode; and
a first epitaxial layer coupled over the light shield;
wherein the first epitaxial layer and the second epitaxial layer form a single crystal; and
wherein the light shield is between the first epitaxial layer and the second epitaxial layer.
17. The device of claim 16 , wherein the photodiode is a deep photodiode.
18. The device of claim 16 , wherein the light shield is comprised of a dielectric and a metal.
19. The device of claim 16 , further comprising a vertical transfer gate electrically and physically coupled with the photodiode.
20. The device of claim 16 , wherein the first epitaxial layer comprises a shallow photodiode, wherein a width of the shallow photodiode is less than a width of the photodiode.