Optoelectronic device and method of manufacture thereof
An optoelectronic device. The device comprising: a silicon-on-insulator, SOI, wafer, the SOI wafer including a cavity and an input waveguide, the input waveguide being optically coupled into the cavity; and a mirror, located within the cavity and bonded to a bed thereof, the mirror including a reflector configured to reflect light received from the input waveguide in the SOI wafer.
1. An optoelectronic device, comprising:
a silicon-on-insulator (SOI) wafer, the SOI wafer including a cavity and an input waveguide, the input waveguide being optically coupled into the cavity;
a mirror, located within the cavity and bonded to a bed thereof, the mirror including a reflector configured to reflect light received from the input waveguide; and
a ridge protruding from the bed of the cavity and overlapping the mirror in a plan view.
2. The optoelectronic device of claim 1 , wherein the mirror is a micro-mirror.
3. The optoelectronic device of claim 1 , wherein the mirror is formed from silicon and the reflector is formed from a metal and faces the input waveguide.
4. The optoelectronic device of claim 1 , wherein the optoelectronic device further comprises an underfill, between the reflector and the bed of the cavity.
5. The optoelectronic device of claim 1 , further comprising a layer of adhesive, located between the mirror and the bed of the cavity.
6. The optoelectronic device of claim 1 , further comprising an anti-reflective coating, provided along one or more sidewalls and the bed of the cavity.
7. The optoelectronic device of claim 1 , wherein the input waveguide is within a device layer of the SOI wafer.
8. The optoelectronic device of claim 1 , wherein the input waveguide is configured to guide light along a guiding direction, and a coupling interface between the input waveguide and the cavity is at an acute angle relative to the guiding direction.
9. The optoelectronic device of claim 1 , wherein the cavity extends beyond an insulator layer of the SOI wafer and into a substrate layer thereof.
10. The optoelectronic device of claim 1 , further comprising an upper cladding layer, above a device layer of the SOI wafer.
11. The optoelectronic device of claim 1 , wherein the mirror has a trapezoidal cross-section, and wherein one of a pair of non-parallel sides faces the input waveguide.
12. The optoelectronic device of claim 1 , wherein the mirror is configured to reflect the light by an angle of around 45°.
13. The optoelectronic device of claim 1 , comprising a plurality of ridges including the ridge, wherein the mirror comprises a protruding portion and is bonded to the bed of the cavity at the protruding portion, and the plurality of ridges are arranged around, and adjacent to, the protruding portion of the mirror in the plan view.
14. The optoelectronic device of claim 1 ,
wherein the reflector is configured to reflect the light received from the input waveguide into the bed of the cavity.
15. The optoelectronic device of claim 14 , wherein the optoelectronic device is configured so that the light reflected by the mirror into the bed of the cavity is transmitted out of the SOI wafer through a bottom surface of the SOI wafer.
16. The optoelectronic device of claim 14 , further comprising an anti-reflective coating covering a portion of the bed of the cavity where the mirror is configured to reflect the light into the bed of the cavity.
17. A method of manufacturing an optoelectronic device, the method comprising:
providing a silicon-on-insulator (SOI) wafer, the SOI wafer including a cavity etched therein, an input waveguide optically coupled to the cavity, and a ridge protruding from a bed of the cavity;
providing a mirror; and
bonding the mirror to the cavity of the SOI wafer, such that the mirror:
overlaps the ridge in a plan view, and
reflects light received from the input waveguide.
18. The method of claim 17 , wherein bonding the mirror to the cavity of the SOI wafer includes using a flip-chip bonding process.
19. The method of claim 17 , wherein bonding the mirror to the cavity of the SOI wafer includes using a micro-transfer printing process.
20. The method of claim 17 , wherein bonding the mirror to the cavity of the SOI wafer includes depositing an adhesive between the mirror and the cavity.
21. An optoelectronic device, produced using the method of claim 17 .