Selective EMI shielding using preformed mask with fang design
A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
1. A method of making a semiconductor device, comprising:
providing a semiconductor package including,
a substrate comprising a land grid array,
a component disposed over the substrate, and
an encapsulant deposited over the component, wherein the land grid array remains outside the encapsulant;
disposing a fanged metal mask over the land grid array after the encapsulant has already been deposited over the component, wherein the fanged metal mask includes a first fang at a first side of the fanged metal mask and a second fang at a second side of the fanged metal mask, and wherein the first fang and second fang extend in a first direction toward the encapsulant;
forming a shielding layer over the semiconductor package; and
removing the fanged metal mask after forming the shielding layer.
2. The method of claim 1 , wherein the first fang and second fang both include a rectangular shape in plan view.
3. The method of claim 1 , wherein the first fang and second fang both include a trapezoidal shape in plan view.
4. The method of claim 1 , further including configuring a shapes of the first fang and second fang to produce an approximately straight borderline of the shielding layer.
5. A method of making a semiconductor device, comprising:
providing a first semiconductor package comprising a substrate and an encapsulant deposited over only a first portion of the substrate;
disposing a fanged mask over a second portion of the substrate after the encapsulant is deposited over the first portion of the substrate, wherein the substrate remains exposed in a gap between the fanged mask and encapsulant;
forming a shielding layer over the encapsulant, wherein the shielding layer is formed on the substrate in the gap between the fanged mask and encapsulant; and
removing the fanged mask.
6. The method of claim 5 , wherein the fanged mask includes a pair of fangs with one fang formed at each side of the fanged mask.
7. The method of claim 6 , wherein the fangs include a rectangular shape in plan view.
8. The method of claim 6 , wherein the fanged mask further includes a curved transition between each of the fangs and a front surface of the fanged mask.
9. The method of claim 6 , wherein the fangs include a rounded surface.
10. The method of claim 6 , further including configuring a shape of the fangs to produce an approximately straight borderline of the shielding layer.
11. The method of claim 6 , further including disposing the fanged mask with the fangs oriented toward the encapsulant.
12. A method of making a semiconductor device, comprising:
providing a semiconductor package including an encapsulant;
disposing a fanged metal mask over the semiconductor package with a gap between the fanged metal mask and encapsulant, wherein the semiconductor package includes an encapsulant prior to the fanged mask being disposed over the semiconductor package;
forming a shielding layer over the semiconductor package and fanged metal mask; and
removing the fanged metal mask.
13. The method of claim 12 , wherein the fanged metal mask includes a pair of fangs with one fang formed at each side of the fanged metal mask.
14. The method of claim 13 , wherein the fangs include a rectangular shape in plan view.
15. The method of claim 13 , wherein the fanged metal mask further includes a curved transition between each of the fangs and a front surface of the fanged metal mask.
16. The method of claim 13 , wherein the fangs include a rounded surface.
17. The method of claim 13 , wherein the fangs include a triangular shape in plan view.
18. The method of claim 13 , further including configuring a shape of the fangs to produce an approximately straight borderline of the shielding layer.
19. A method of making a semiconductor device, comprising:
providing a semiconductor package including an encapsulant;
disposing a fanged mask over the semiconductor package, wherein the semiconductor package includes an encapsulant prior to the fanged mask being disposed over the semiconductor package; and
forming a shielding layer over the semiconductor package and fanged mask.
20. The method of claim 19 , wherein the fanged mask includes a pair of fangs with one fang formed at each side of the fanged mask.
21. The method of claim 20 , wherein the fanged mask further includes a curved transition between each of the fangs and a front surface of the fanged mask.
22. The method of claim 20 , wherein the fangs include a rounded surface.
23. The method of claim 20 , wherein the fangs include a triangular shape in plan view.