Shielded semiconductor packages with open terminals and methods of making via two-step process
A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.
1. A semiconductor device, comprising:
a substrate;
a terminal formed over the substrate;
an insulating layer formed over the substrate including an opening in the insulating layer over the terminal;
an encapsulant disposed over a first portion of the insulating layer while a second portion of the insulating layer around the opening of the insulating layer remains exposed from the encapsulant; and
a shielding layer formed over the substrate, insulating layer, and encapsulant with the shielding layer physically contacting the second portion of the insulating layer, wherein an opening in the shielding layer is formed over the terminal.
2. The semiconductor device of claim 1 , further including a semiconductor package disposed adjacent to the substrate, wherein the semiconductor package is connected to the terminal.
3. The semiconductor device of claim 2 , further including a ribbon cable or flexible printed circuit board coupled between the terminal and semiconductor package.
4. The semiconductor device of claim 2 , further including a board-to-board connector coupled between the terminal and semiconductor package.
5. The semiconductor device of claim 1 , further including a second terminal and a second opening formed through the insulating layer over the second terminal.
6. The semiconductor device of claim 5 , wherein the opening of the shielding layer is formed over the second terminal.
7. A semiconductor device, comprising:
an encapsulant;
a terminal disposed outside a footprint of the encapsulant;
an insulating layer including an opening formed through the insulating layer over the terminal; and
an electromagnetic interference (EMI) shielding layer formed over the encapsulant, insulating layer, and terminal including an opening formed through the EMI shielding layer over the terminal, wherein the EMI shielding layer physically contacts the insulating layer.
8. The semiconductor device of claim 7 , further including a second terminal and a second opening formed in the insulating layer over the second terminal.
9. The semiconductor device of claim 8 , wherein the opening of the EMI shielding layer is formed over the second terminal.
10. The semiconductor device of claim 7 , wherein the terminal includes a contact pad.
11. The semiconductor device of claim 7 , further including an interconnect structure disposed over the terminal.
12. The semiconductor device of claim 11 , further including a semiconductor package connected to the terminal through the interconnect structure.
13. The semiconductor device of claim 7 , further including a header disposed over the terminal.
14. A semiconductor device, comprising:
a substrate;
a first contact pad formed over the substrate;
an insulating layer formed over the substrate with an opening formed in the insulating layer over the first contact pad;
an encapsulant formed over a first portion of the insulating layer; and
a conductive layer formed over the insulating layer and encapsulant, wherein a portion of the conductive layer physically contacts a second portion of the insulating layer and the conductive layer includes an opening over the first contact pad.
15. The semiconductor device of claim 14 , further including a second contact pad formed over the substrate and a second opening formed in the insulating layer over the second contact pad.
16. The semiconductor device of claim 15 , wherein the opening of the conductive layer is formed over the first contact pad and second contact pad.
17. The semiconductor device of claim 14 , further including an interconnect structure disposed over the first contact pad.
18. The semiconductor device of claim 17 , wherein the interconnect structure extends outside a footprint of the substrate.
19. The semiconductor device of claim 14 , further including a header pin disposed over the first contact pad.
20. The semiconductor device of claim 14 , further including an electrical component disposed between the substrate and conductive layer.
21. A semiconductor device, comprising:
a substrate comprising a terminal and an insulating layer formed over the substrate, wherein the insulating layer includes an opening over the terminal;
an encapsulant disposed over the substrate; and
a shielding layer formed over the encapsulant and physically contacting the insulating layer of the substrate, wherein the shielding layer includes an opening over the terminal.
22. The semiconductor device of claim 21 , further including an interconnect structure disposed over the terminal.
23. The semiconductor device of claim 22 , further including a semiconductor package connected to the substrate through the interconnect structure and terminal.
24. The semiconductor device of claim 22 , wherein the interconnect structure includes a ribbon cable connector.
25. The semiconductor device of claim 21 , further including a header disposed over the terminal.