Data storage devices with integrated slider voltage potential control
Disclosed herein is a data storage device comprising a slider comprising an embedded contact sensor, an electronics module, and a plurality of lines disposed between and coupled to the slider and the electronics module, wherein at least one line of the plurality of lines is configured to both (a) couple a slider bias voltage to a body of the slider to control a potential of the slider, and (b) provide a signal to the embedded contact sensor. The slider may also include a shunt circuit for mitigating radio-frequency interference by shunting it to ground. The slider may include a write element, which may include a write-field enhancement structure. The slider may include a read element for reading from a recording media.
1. A data storage device, comprising:
a slider comprising an embedded contact sensor;
an electronics module; and
a plurality of lines disposed between and coupled to the slider and the electronics module,
wherein at least one line of the plurality of lines is configured to both (a) couple a slider bias voltage to a body of the slider to control a potential of the slider, and (b) provide a signal to the embedded contact sensor.
2. The data storage device recited in claim 1 , further comprising circuitry configured to mitigate radio-frequency interference, and wherein the at least one line of the plurality of lines is coupled to the circuitry.
3. The data storage device recited in claim 1 , further comprising a flexure disposed between the electronics module and the slider, the flexure comprising:
a support layer;
an insulator layer;
a conductor layer; and
a cover layer,
and wherein the plurality of lines is in the conductor layer.
4. The data storage device recited in claim 1 , wherein the slider further comprises a write head, and wherein a subset of lines of the plurality of lines is configured to provide a write current to the write head to record data to a recording media.
5. The data storage device recited in claim 4 , wherein the write head includes a write-field enhancement structure.
6. The data storage device recited in claim 5 , wherein the write-field enhancement structure comprises a spin-torque oscillator or a DC field generation (DFG) layer.
7. The data storage device recited in claim 1 , further comprising:
at least one resistance disposed between a slider body connection and the embedded contact sensor.
8. The data storage device recited in claim 7 , wherein a value of a first resistance of the at least one resistance is approximately 18 kOhms.
9. The data storage device recited in claim 7 , wherein the slider further comprises a shunt circuit disposed between a slider body connection and ground.
10. The data storage device recited in claim 9 , wherein the shunt circuit comprises:
a first branch comprising a first resistance; and
a second branch comprising a capacitance,
wherein the first branch and the second branch are connected in parallel.
11. The data storage device recited in claim 10 , wherein a value of the first resistance is approximately 750 kOhms, and a value of the capacitance is greater than or equal to about 40 pF.
12. The data storage device recited in claim 10 , wherein the shunt circuit is configured to shunt radio-frequency interference (RFI) signals above a specified cutoff frequency to ground.
13. The data storage device recited in claim 9 , wherein the slider further comprises a read element, and wherein the shunt circuit is configured to reduce radio-frequency interference (RFI) signals affecting the read element.
14. The data storage device recited in claim 13 , further comprising a resistance connected in parallel between a first read line connected to the read element and a second read line connected to the read element.
15. The data storage device recited in claim 14 , further comprising:
a second resistance between the first read line and ground; and
a third resistance between the second read line and ground.
16. The data storage device recited in claim 15 , wherein a value of the second resistance or the third resistance is approximately 15 kOhms, and a value of the first resistance is approximately 2 kOhms.
17. The data storage device recited in claim 1 , further comprising a shunt circuit disposed between a slider body connection and ground.
18. The data storage device recited in claim 17 , wherein the shunt circuit comprises:
a first branch comprising a first resistance; and
a second branch comprising a capacitance,
wherein the first branch and the second branch are connected in parallel.
19. The data storage device recited in claim 18 , wherein a value of the first resistance is approximately 750 kOhms, and a value of the capacitance is greater than or equal to about 40 pF.
20. The data storage device recited in claim 17 , wherein the slider further comprises a read element, and wherein the shunt circuit is configured to reduce radio-frequency interference (RFI) signals affecting the read element.