Semiconductor device and method of stacking devices using support frame
A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. A first support frame is disposed over the first substrate. The first support frame has a horizontal support channel extending across the first substrate and a vertical support brace extending from the horizontal support channel to the first substrate. The first support frame can have a vertical shielding partition extending from the horizontal support channel to the first substrate. An encapsulant is deposited over the first electrical component and first substrate and around the first support frame. A second electrical component is disposed over the first electrical component. A second substrate is disposed over the first support frame. A second electrical component is disposed over the second substrate. A third substrate is disposed over the second substrate. A second support frame is disposed over the second substrate.
1. A semiconductor device, comprising:
a first substrate;
a first electrical component disposed over the first substrate;
a first support frame disposed over the first substrate, wherein the first support frame includes,
(a) a plurality of horizontal support channels with a center pad defining a plurality of compartments, and
(b) a plurality of vertical support braces extending from the plurality of horizontal support channels to the first substrate; and
a second substrate disposed over the first support frame.
2. The semiconductor device of claim 1 , further including an encapsulant deposited over the first electrical component and first substrate and around the first support frame.
3. The semiconductor device of claim 1 , further including a second electrical component disposed over the first electrical component.
4. The semiconductor device of claim 1 , wherein the first support frame includes a vertical shielding partition extending from the plurality of horizontal support channels to the first substrate.
5. The semiconductor device of claim 1 , further including a second support frame disposed over the second substrate.
6. A semiconductor device, comprising:
a first substrate;
a first electrical component disposed over the first substrate; and
a first support frame disposed over the first substrate, wherein the first support frame includes a plurality of horizontal support channels extending across the first substrate with a center pad of the plurality of horizontal support channels defining a plurality of compartments, and a plurality of vertical support braces extending from the plurality of horizontal support channels to the first substrate.
7. The semiconductor device of claim 6 , further including an encapsulant deposited over the first electrical component and first substrate and around the first support frame.
8. The semiconductor device of claim 6 , further including a second electrical component disposed over the first electrical component.
9. The semiconductor device of claim 6 , wherein the first support frame includes a vertical shielding partition extending from the plurality of horizontal support channels to the first substrate.
10. The semiconductor device of claim 6 , further including a second substrate disposed over the first support frame.
11. The semiconductor device of claim 10 , further including a third substrate disposed over the second substrate.
12. The semiconductor device of claim 10 , further including a second support frame disposed over the second substrate.
13. A method of making a semiconductor device, comprising:
providing a first substrate;
disposing a first electrical component over the first substrate;
disposing a first support frame over the first substrate with a center pad defining a plurality of compartments; and
disposing a second substrate over the first support frame.
14. The method of claim 13 , wherein the first support frame includes a plurality of horizontal support channels extending across the first substrate with the center pad of the plurality of horizontal support channels defining a plurality of compartments, and a plurality of vertical support braces extending from the plurality of horizontal support channel to the first substrate.
15. The method of claim 13 , further including depositing an encapsulant over the first electrical component and first substrate and around the first support frame.
16. The method of claim 13 , wherein the first support frame includes a vertical shielding partition extending from the plurality of horizontal support channels to the first substrate.
17. A method of making a semiconductor device, comprising:
providing a first substrate;
disposing a first electrical component over the first substrate; and
disposing a first support frame over the first substrate, wherein the first support frame includes a horizontal support channel extending across the first substrate with a center pad of the horizontal support channel defining a plurality of compartments, and a vertical support brace extending from the horizontal support channel to the first substrate.
18. The method of claim 17 , further including depositing an encapsulant over the first electrical component and first substrate and around the first support frame.
19. The method of claim 17 , wherein the first support frame includes a vertical shielding partition extending from the horizontal support channel to the first substrate.
20. The method of claim 17 , further including disposing a second substrate over the first support frame.