Semiconductor device and method of manufacturing the same
An upper surface of a plug (PL 1 ) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate ( 1 S), completing a CMP method for forming the plug (PL 1 ) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL 1 ) and a wiring (W 1 ) in a vertical direction can be ensured. Also, the wiring (W 1 ) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.
1. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film formed over a main surface of the semiconductor substrate;
a second insulating film formed over the first insulating film;
a third insulating film formed over the second insulating film;
a first conductor formed in the first insulating film and the second insulating film;
a second conductor formed in the second insulating film and the third insulating film; and
a wiring trench formed in the second insulating film and the third insulating film,
wherein an upper surface of the first conductor is formed higher than a lower surface of the second insulating film which is in contact with the first insulating film,
wherein a lowermost lower surface of the second conductor is formed in the first insulating film,
wherein a dielectric constant of the third insulating film is lower than a dielectric constant of the first insulating film, and
wherein a lowermost lower surface of the wiring trench is formed in the second insulating film, and wherein another lower surface of the wiring trench is formed on the upper surface of the first conductor.
2. The semiconductor device according to claim 1 ,
wherein the first conductor is formed such that penetrate through the first insulating film,
wherein the second conductor is formed such that embedded in the wiring trench, and
wherein the second conductor contains copper.
3. The semiconductor device according to claim 1 ,
wherein the first conductor and the second conductor are connected on the other lower surface of the wiring trench.
4. The semiconductor device according to claim 1 ,
wherein the lowermost lower surface of the wiring trench is located higher than the upper surface of the first insulating film.
5. The semiconductor device according to claim 4 ,
wherein the lowermost lower surface of the wiring trench is located 20 nm or more higher than the upper surface of the first insulating film.
6. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film formed over a main surface of the semiconductor substrate;
a second insulating film formed over the first insulating film;
a third insulating film formed over the second insulating film;
a first conductor formed in the first insulating film and the second insulating film; and
a second conductor formed in the second insulating film and the third insulating film,
wherein an upper surface of the first conductor is formed higher than a lower surface of the second insulating film which is in contact with the first insulating film,
wherein a lowermost lower surface of the wiring trench is formed in the second insulating film,
wherein a dielectric constant of the third insulating film is lower than a dielectric constant of the first insulating film, and
wherein an entire of the second conductor is formed in the second insulating film and the third insulating film.
7. The semiconductor device according to claim 6 ,
wherein the second conductor is not formed in the first insulating film.
8. The semiconductor device according to claim 1 ,
wherein the dielectric constant of the third insulating film is lower than a dielectric constant of a silicon oxide.
9. The semiconductor device according to claim 8 ,
wherein the first insulating film and second insulating film are silicon oxide films, and the third insulating film is SiOC film.
10. The semiconductor device according to claim 8 ,
wherein a dielectric constant of the second insulating film is lower than the dielectric constant of the silicon oxide.
11. The semiconductor device according to claim 10 ,
wherein the first insulating film is silicon oxide films, and the second insulating film and the third insulating film are SiOC films.
12. The semiconductor device according to claim 1 ,
wherein the first insulating film, the second insulating film and the third insulating film are formed as a single layer respectively.
13. The semiconductor device according to claim 1 ,
wherein the second insulating film and the third insulating film are extended an entire horizontal surface of the first insulating film.
14. The semiconductor device according to claim 1 , further comprising:
a fourth insulating film formed between the semiconductor substrate and the first insulating film,
wherein the first conductor is formed in the first insulating film, the second insulating film and the fourth insulating film.
15. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film formed over a main surface of the semiconductor substrate;
a second insulating film formed over the first insulating film;
a third insulating film formed over the second insulating film;
a first conductor formed in the first insulating film and the second insulating film; and
a second conductor formed in the second insulating film and the third insulating film,
wherein an upper surface of the first conductor is formed higher than a lower surface of the second insulating film which is in contact with the first insulating film,
wherein a lowermost lower surface of the second conductor is formed in the first insulating film,
wherein a dielectric constant of the third insulating film is lower than a dielectric constant of the first insulating film, and
wherein a part of the second insulating film is formed over the upper surface of the first conductor.
16. The semiconductor device according to claim 1 ,
wherein the lowermost lower surface of the second conductor is formed on the lowermost lower surface of the wiring trench and is higher than the upper surface of the first insulating film.