Dual circuit digital isolator
An apparatus including; a substrate; an isolator that is formed over the substrate, the isolator including a silicon shield layer that is formed between a first buried oxide (BOX) layer and a second BOX layer; a silicon layer having an oxide trench structure formed therein, the oxide trench structure being arranged to define a first silicon island and a second silicon island; a first electronic circuit that is formed over the first silicon island; and a second electronic circuit that is formed over the second silicon island, the first electronic circuit being electrically coupled to the first electronic circuit.
1. An apparatus, comprising;
a substrate;
an isolator that is formed over the substrate, the isolator including a silicon shield layer that is formed between a first buried oxide (BOX) layer and a second BOX layer;
a silicon layer having an oxide trench structure formed therein, the oxide trench structure being arranged to define a first silicon island and a second silicon island;
a first electronic circuit that is formed over the first silicon island; and
a second electronic circuit that is formed over the second silicon island, the second electronic circuit being electrically coupled to the first electronic circuit.
2. The apparatus of claim 1 , wherein:
the isolator further includes an oxide isolation layer; and
the silicon shield layer includes a first segment and a second segment that is separated from the first segment by the oxide isolation layer.
3. The apparatus of claim 1 , wherein:
the first electronic circuit and the second electronic circuit are communicatively coupled to one another via a communications channel, and
the first electronic circuit is configured to transmit a digital data signal to the second electronic circuit via the communications channel.
4. The apparatus of claim 1 , wherein the silicon shield layer includes a first portion and a second portion, the apparatus further comprising:
a first conductive via that extends through the silicon layer and the second BOX layer and contacts the first portion of the silicon shield layer, the first conductive via being coupled to a ground source of the first electronic circuit; and
a second conductive via that extends through the silicon layer and the second BOX layer and contacts the second portion of the silicon shield layer, the second conductive via being coupled to a ground source of the second electronic circuit.
5. The apparatus of claim 1 , further comprising:
a first conductive via that is in contact with a first segment of the silicon shield layer;
a second conductive via that is in contact with a second segment of the silicon shield layer.
6. The apparatus of claim 1 , further comprising:
a conductive via that is in contact with the silicon shield layer, the conductive via being coupled to the first electronic circuit and the second electronic circuit;
wherein at least one of the first electronic circuit and the second electronic circuit is configured to cancel noise, caused by parasitic coupling between the first silicon island and the second silicon island, based on a signal that is received over the conductive via.
7. The apparatus of claim 6 , wherein the conductive via extends through a portion of the oxide trench structure and the second BOX layer.
8. An apparatus, comprising:
a substrate;
an isolator that is formed over the substrate, the isolator including a silicon shield layer that is formed between a first buried oxide (BOX) layer and a second BOX layer;
a silicon layer having an oxide trench structure formed therein, the oxide trench structure being arranged to define a first silicon island and a second silicon island;
a first electronic circuit that is formed over the first silicon island;
a second electronic circuit that is formed over the second silicon island, and
a conductive via that is formed in the oxide trench structure, the conductive via extending through the oxide trench structure and the second BOX layer to the silicon shield layer.
9. The apparatus of claim 8 , wherein the first electronic circuit is coupled to the first silicon island via a first reference signal line, and the first electronic circuit is configured to perform active noise cancellation on a digital data signal that is received from the second electronic circuit, the active noise cancellation being performed based on a first reference signal that is received by the first electronic circuit over the first reference signal line.
10. The apparatus of claim 9 , wherein the second electronic circuit is coupled to the second silicon island via a second reference signal line, and the second electronic circuit is configured to perform active noise cancellation on a digital data signal that is received from the first electronic circuit, the active noise cancellation being performed based on a second reference signal that is received by the second electronic circuit over the second reference signal line.
11. The apparatus of claim 8 , wherein the first electronic circuit is configured to output a pulse of negative polarity through the conductive via, the pulse of negative polarity being output when a voltage of the first electronic circuit increases relative to the substrate.
12. The apparatus of claim 8 , wherein:
the first electronic circuit and the second electronic circuit are communicatively coupled to one another via a communications channel, and
the first electronic circuit is configured to transmit a digital data signal to the second electronic circuit via the communications channel.
13. The apparatus of claim 8 , wherein at least one of the first electronic circuit and the second electronic circuit is capacitively coupled to the conductive via.
14. The apparatus of claim 8 , wherein the first electronic circuit is capacitively coupled to the conductive via, and the first electronic circuit is coupled to the first silicon island via a reference signal line.
15. An apparatus, comprising:
a substrate;
an isolator that is formed over the substrate, the isolator including a silicon shield layer that is formed between a first buried oxide (BOX) layer and a second BOX layer;
a silicon layer having an oxide trench structure formed therein, the oxide trench structure being arranged to define a first silicon island and a second silicon island;
a first electronic circuit that is formed over the first silicon island;
a second electronic circuit that is formed over the second silicon island; and
a first conductive via that extends through the silicon layer, the first conductive via being arranged to couple at least a portion of the silicon shield layer to a ground source of the first electronic circuit.
16. The apparatus of claim 15 , further comprising a second conductive via that extends through the silicon layer, the second conductive via being arranged to couple at least a portion of the silicon shield layer to a ground source of the second electronic circuit.
17. The apparatus of claim 16 , wherein the first conductive via is coupled to the ground source of the first electronic circuit via a first ground line, and the second conductive via is coupled to the ground source of the second electronic circuit via a second ground line.
18. The apparatus of claim 15 , wherein the first conductive via extends through the second BOX layer.
19. The apparatus of claim 15 , wherein the first conductive via extends from a top surface of the silicon layer to a top surface of the silicon shield layer.
20. The apparatus of claim 15 , wherein:
the first electronic circuit and the second electronic circuit are communicatively coupled to one another via a communications channel, and
the first electronic circuit is configured to transmit a digital data signal to the second electronic circuit via the communications channel.