Semiconductor Device and Method of Forming Dual-Sided Interconnect Structures in FO-WLCSP
A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.
1 . A method of making a semiconductor device, comprising:
providing a substrate including first and second conductive layers formed over first and second opposing surfaces of the substrate;
forming a plurality of bumps over the substrate;
mounting a semiconductor die to the substrate between the bumps;
depositing an encapsulant over the substrate and semiconductor die; and
forming an interconnect structure over the encapsulant and semiconductor die and electrically coupled to the bumps.
2 . The method of claim 1 , further including:
forming a first insulating layer over the first surface of the substrate and the first conductive layer; and
forming a second insulating layer over the second surface of the substrate and the second conductive layer.
3 . The method of claim 2 , further including removing a portion of the first insulating layer or second insulating layer by laser direct ablation.
4 . The method of claim 1 , further including removing a portion of the encapsulant to expose the substrate.
5 . The method of claim 1 , wherein a portion of the bumps extends out from the encapsulant.
6 . The method of claim 1 , further including disposing a semiconductor package over the substrate and electrically connected to the substrate.
7 . A method of making a semiconductor device, comprising:
providing a substrate;
forming a vertical interconnect structure over the substrate;
mounting a semiconductor die to the substrate;
depositing an encapsulant over the substrate and semiconductor die; and
forming a first interconnect structure over the encapsulant and semiconductor die.
8 . The method of claim 7 , wherein the substrate includes first and second conductive layers formed over first and second opposing surfaces of the substrate.
9 . The method of claim 8 , further including:
forming a first insulating layer over the first surface of the substrate and the first conductive layer; and
forming a second insulating layer over the second surface of the substrate and the second conductive layer.
10 . The method of claim 9 , further including removing a portion of the first insulating layer or second insulating layer by laser direct ablation.
11 . The method of claim 8 , further including removing a portion of the substrate to expose the first conductive layer or second conductive layer.
12 . The method of claim 7 , further including removing a portion of the substrate to expose the vertical interconnect structure.
13 . The method of claim 7 , further including:
removing the substrate;
forming a protection layer over the encapsulant and semiconductor die; and
removing a portion of the protection layer to expose the vertical interconnect structure.
14 . A semiconductor device, comprising:
a substrate;
a vertical interconnect structure formed over the substrate;
a semiconductor die mounted to the substrate;
an encapsulant deposited over the substrate and semiconductor die; and
a first interconnect structure formed over the encapsulant and semiconductor die.
15 . The semiconductor device of claim 14 , wherein the substrate includes first and second conductive layers formed over first and second opposing surfaces of the substrate.
16 . The semiconductor device of claim 15 , further including:
a first insulating layer formed over the first surface of the substrate and the first conductive layer; and
a second insulating layer formed over the second surface of the substrate and the second conductive layer.
17 . The semiconductor device of claim 14 , wherein a portion of the vertical interconnect structure extends out from the encapsulant.
18 . The semiconductor device of claim 14 , wherein the vertical interconnect structure includes a plurality of bumps.
19 . The semiconductor device of claim 14 , further including a semiconductor package disposed over the substrate and electrically connected to the substrate.
20 . A semiconductor device, comprising:
a substrate;
a semiconductor die mounted to the substrate;
an encapsulant deposited over the substrate and semiconductor die; and
a first interconnect structure formed over the encapsulant and semiconductor die.
21 . The semiconductor device of claim 20 , further including a vertical interconnect structure formed over the substrate.
22 . The semiconductor device of claim 21 , wherein the vertical interconnect structure includes a plurality of bumps.
23 . The semiconductor device of claim 20 , wherein the substrate includes first and second conductive layers formed over first and second opposing surfaces of the substrate.
24 . The semiconductor device of claim 23 , further including:
a first insulating layer formed over the first surface of the substrate and the first conductive layer; and
a second insulating layer formed over the second surface of the substrate and the second conductive layer.
25 . The semiconductor device of claim 20 , further including a semiconductor package disposed over the substrate and electrically connected to the substrate.