Laser-based redistribution and multi-stacked packages
A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.
1. A semiconductor device, comprising:
a first package layer;
a first shielding layer formed over the first package layer, wherein the first shielding layer is patterned to form a redistribution layer;
an electrical component disposed over the redistribution layer;
an encapsulant deposited over the electrical component; and
a second shielding layer formed over the encapsulant, wherein the second shielding layer is patterned.
2. The semiconductor device of claim 1 , wherein the second shielding layer is patterned to include an antenna.
3. The semiconductor device of claim 1 , further including a conductive via formed through the encapsulant, wherein the electrical component is coupled to the second shielding layer through the conductive via.
4. The semiconductor device of claim 1 , further including:
patterning the second shielding layer to include a contact pad; and
disposing a board-to-board (B2B) connector over the contact pad.
5. The semiconductor device of claim 1 , further including a patterned cavity formed in the encapsulant, wherein the second shielding layer is patterned to match the patterned cavity.
6. The semiconductor device of claim 1 , wherein the first shielding layer is patterned to include a contact pad.
7. A semiconductor device, comprising:
a first package layer;
a patterned cavity formed in the first package layer;
a first shielding layer formed over the first package layer, wherein the first shielding layer is patterned to form a redistribution layer matching the patterned cavity;
a second package layer formed over the first package layer and utilizing the redistribution layer; and
a second shielding layer formed over the second package layer, wherein the second shielding layer is patterned.
8. The semiconductor device of claim 7 , wherein the second shielding layer is patterned to include an antenna.
9. The semiconductor device of claim 7 , wherein the first package layer is coupled to the second package layer through the redistribution layer.
10. The semiconductor device of claim 7 , further including a board-to-board (B2B) connector disposed over the second shielding layer.
11. The semiconductor device of claim 7 , wherein the redistribution layer includes a ground plane.
12. The semiconductor device of claim 7 , wherein the first shielding layer is patterned to include a contact pad.
13. The semiconductor device of claim 12 , wherein the second package layer includes an electrical component mounted on the contact pad.
14. A semiconductor device, comprising:
a first package layer;
a shielding layer formed over the first package layer, wherein the shielding layer is patterned into a redistribution layer; and
an encapsulant deposited over the redistribution layer.
15. The semiconductor device of claim 14 , wherein the redistribution layer is embedded into the first package layer.
16. The semiconductor device of claim 14 , wherein the first shielding layer is patterned to form an antenna.
17. The semiconductor device of claim 14 , further including a second shielding layer formed over the encapsulant.
18. The semiconductor device of claim 17 , wherein the second shielding layer is patterned.
19. The semiconductor device of claim 14 , further including an electrical component mounted over the redistribution layer, wherein the encapsulant is deposited over the electrical component.
20. A semiconductor device, comprising:
a first package layer;
a redistribution layer formed over the first package layer;
a second package layer formed over the redistribution layer;
an antenna formed over the second package layer; and
a 5G transceiver disposed within the first package layer or second package layer, wherein the 5G transceiver is coupled to the antenna.
21. The semiconductor device of claim 20 , wherein the redistribution layer is embedded in the first package layer.
22. The semiconductor device of claim 20 , wherein the antenna is embedded in the second package layer.
23. The semiconductor device of claim 20 , further including a conductive via formed through the first package layer to couple the first package layer to the redistribution layer.
24. The semiconductor device of claim 20 , further including:
a first shielding layer formed around the first package layer; and
a second shielding layer formed around the first shielding layer and first package layer.
25. The semiconductor device of claim 24 , wherein the second shielding layer is formed over the second package layer.