Media underlayer structure for heat-assisted magnetic recording and media fabrication methods therefor
Various apparatuses, systems, methods, and media are disclosed for heat-assisted magnetic recording (HAMR) that includes a HAMR medium with a seed-thermal barrier structure. The seed-thermal barrier structure is positioned between a heat sink layer and a magnetic recording layer. In some examples, the seed-thermal barrier structure has a first layer including MgOTiO (MTO), a second layer including TiN on the first layer, a third layer on the second layer, and a fourth layer including MTO on the third layer. The third layer, in some examples, includes at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.
1. A magnetic recording medium, comprising:
a substrate;
a heat sink layer on the substrate;
an underlayer structure on the heat sink layer, wherein the underlayer structure includes a first layer comprising MgOTiO (MTO) on the heat sink layer, a second layer comprising TiN on the first layer, a third layer on the second layer, and a fourth layer comprising MTO on the third layer; and
a magnetic recording layer structure on the fourth layer.
2. The magnetic recording medium of claim 1 , wherein the third layer comprises a metal or an alloy.
3. The magnetic recording medium of claim 1 , wherein the third layer comprises at least one of Pt or RuAl.
4. The magnetic recording medium of claim 1 , wherein the third layer comprises PtZr or PtTa.
5. The magnetic recording medium of claim 1 , wherein the third layer comprises at least one of Rh, Cr, FePt, or CrMo.
6. The magnetic recording medium of claim 1 , wherein the third layer comprises RuAl and a thickness equal to or greater than 0.5 nanometers (nm) and less than or equal to 2.5 nm.
7. The magnetic recording medium of claim 1 , wherein the first layer comprises a thickness equal to or greater than 0.9 nm and less than or equal to 2.7 nm; and
wherein the fourth layer comprises a thickness equal to or greater than 0.9 nm and less than or equal to 2.7 nm.
8. The magnetic recording medium of claim 1 , wherein the first layer and the fourth layer comprise a total thickness of about 3.6 nm.
9. The magnetic recording medium of claim 1 , further comprising:
an intermediate layer comprising RuAl, wherein the intermediate layer is directly on the heat sink layer and wherein the first layer is directly on the intermediate layer.
10. A data storage device comprising:
the magnetic recording medium of claim 1 ; and
a write head configured to write data to the magnetic recording medium and comprising a near field transducer (NFT) to generate localized heating in the magnetic recording medium during the writing.
11. The magnetic recording medium of claim 10 , wherein the third layer comprises at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.
12. A magnetic recording medium, comprising:
a substrate;
a heat sink layer on the substrate;
a first MgOTiO (MTO) layer on the heat sink layer, wherein the first MTO layer comprises MTO;
a first TiN layer directly on the first MTO layer, wherein the first TiN layer comprises TiN;
a first middle thermal barrier layer directly on the first TiN layer;
a second MTO layer directly on the first middle thermal barrier layer, wherein the second MTO layer comprises MTO; and
a magnetic recording layer structure on the second MTO layer.
13. The magnetic recording medium of claim 12 , wherein the TiN in the first TiN layer includes a mixture of Ti that migrated from the first MTO layer and nitrogen (N2) gas residue.
14. The magnetic recording medium of claim 12 , wherein the first middle thermal barrier layer comprises at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.
15. The magnetic recording medium of claim 12 , further comprising:
an intermediate layer including RuAl, wherein the intermediate layer is directly on the heat sink layer and the first MTO layer is directly on the intermediate layer.
16. The magnetic recording medium of claim 12 , further comprising:
a second TiN layer directly on the second MTO layer, wherein the second TiN layer includes a mixture of Ti that migrated from the second MTO layer and nitrogen (N2) gas residue;
a second middle thermal barrier layer directly on the second TiN layer, wherein the second middle thermal barrier layer comprises at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr;
a third MTO layer directly on the second middle thermal barrier layer, wherein the third MTO layer includes MTO; and
wherein the magnetic recording layer structure is on the third MTO layer.
17. A method for manufacturing a magnetic recording medium, the method comprising:
providing a substrate;
providing a heat sink on the substrate;
providing a first layer comprising MgOTiO (MTO) on the heat sink;
causing a reactive gas comprising N2 to flow in a chamber containing the first layer to form a second layer on the first layer, wherein the second layer comprises TiN;
providing a third layer on the second layer;
providing a fourth layer comprising MTO on the third layer; and
providing a magnetic recording layer structure on the fourth layer.
18. The method of claim 17 , wherein the TiN in the second layer includes Ti that migrated from the first layer and nitrogen (N2) gas residue.
19. The method of claim 17 , wherein the third layer comprises at least one of: RuAl, Pt, PtZr, PtTa, Rh, FePt, CrMo, or Cr.
20. A magnetic recording medium formed using the method of claim 17 .