Array of heat-sinked power semiconductors
An array of heat-sinked power semiconductors that includes a power semiconductor and a heat sink. The power semiconductor has a power semiconductor die, a plurality of first terminals and a second terminal. The power semiconductor die has a plurality of semiconductor terminals. Each of the first terminals is electrically coupled to an associated one of the semiconductor terminals. The second terminal is a surface mount terminal and is electrically coupled to one of the first terminals. The heat sink has a heat sink body and a plurality of fins. The heat sink body has a base and an exterior surface. The base is fixedly coupled directly to the surface mount terminal. The exterior surface has a fin mount portion to which the fins extend. At least a portion of the fin-mount portion is oriented non-parallel to base.
1 . An array of heat-sinked power semiconductors comprising:
a power semiconductor having a power semiconductor die, a plurality of first terminals and a second terminal, the power semiconductor die having a plurality of semiconductor terminals, each of the first terminals being electrically coupled to an associated one of the semiconductor terminals, the second terminal being a surface mount terminal and electrically coupled to one of the first terminals; and
a heat sink having a heat sink body and a plurality of sets of fins, the heat sink body having a base surface entirely formed with a plane parallel to and fixedly coupled directly to the surface mount terminal, a pair of first faces opposite one another along a linear apex such that the sets of fins project away from the heat sink body in different directions, and a pair of second faces opposite and parallel to one another,
wherein the heat sink body is formed with a closed wedge-shape by all of the faces such as the base surface, the pair of first faces and the pair of second faces.
2 . The array of heat-sinked power semiconductors of claim 1 , wherein the first faces are boundary surfaces of the heat sink base and terminate at respective boundary surface planes.
3 . The array of heat-sinked power semiconductors of claim 1 , wherein the heat sink body has two boundary surfaces.
4 . The array of heat-sinked power semiconductors of claim 1 , wherein at least one of the sets of fins is unitarily and integrally formed with the heat sink body.
5 . An array of heat-sinked power semiconductors comprising:
a power semiconductor having a power semiconductor die, a plurality of first terminals and a second terminal, the power semiconductor die having a plurality of semiconductor terminals, each of the first terminals being electrically coupled to an associated one of the semiconductor terminals, the second terminal being a surface mount terminal and electrically coupled to one of the first terminals; and
a heat sink having a heat sink body and a plurality of fins, the heat sink body having a base and a plurality of exterior surfaces, which form a closed wedge-shape, the base being fixedly coupled directly to the surface mount terminal and at least one of the plurality of exterior surfaces having a fin mount portion to which the fins extend, at least a portion of the fin-mount portion being non-parallel to base,
wherein the fin-mount portion includes first and second planar segments intersecting one another.
6 . The array of heat-sinked power semiconductors of claim 5 , wherein the first and second planar segments that are not parallel to one another.
7 . The array of heat-sinked power semiconductors of claim 5 , wherein at least a portion of the fins is unitarily and integrally formed with the heat sink body.