METHOD FOR ADJUSTING THE TELECENTRICITY IN A PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY

Abstract

Shown and described is a method for adjusting the telecentricity in a projection exposure system (1) for microlithography comprising the following steps: a) providing a projection exposure system (1), wherein the projection exposure system (1) has an illumination system (3), a projection system (4), a mask (6), a radiation source (2) and/or an aperture stop (23), wherein the projection exposure system (1) is configured to guide radiation (R, R', R''), b) adjusting the telecentricity in the projection exposure system (1), wherein, preferably, in step b) the telecentricity is adjusted by adjusting the optical path of the projection exposure system, by adjusting the optical axis (OA, OAIL, OAPR) of the projection exposure system (1) and/or by adjusting radiation (R, R', R'') guided by the projection exposure system, b1) conducting a pupil measurement and wherein, preferably, in step b) the telecentricity is adjusted based on the pupil measurement. In order to provide a method that can reduce the deviation of a sidewall angle of a profile to be created in the radiation-sensitive layer from the intended sidewall angle, the described method is proposed.

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IPC Classification

G03F 7/ 00 A I