Assignment of Assignor's Interest

Recorded: 1994-12-09 Pages: 2

Assignor

YANAGIGAWA, HIROSHI

Executed: 1994-12-01

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, TOKYO, JAPAN

Covered Property (1)

High-Breakdown-Voltage Mos Transistor

Patent: 5,523,601 →

Application: 08/353,080 →

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.