Patent Assignment
Reel/Frame 011253/0709
Assignment of Assignor's Interest
Recorded: 2000-10-06
Pages: 3
Assignor
YAMAZAKI, YASUSHI
Executed: 2000-10-06
Assignee
NEC CORPORATION
MINATO-KU, 7-1, SHIBA 5-CHOME, TOKYO, JAPAN
Covered Property
(1)
Dram Mos Field Effect Transistors with Thresholds Determined by Differential Gate Doping
Patent:
6,573,575 →
Application:
09/684,840 →
Related Assignments
(4)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 20, 2003
From: NEC CORPORATION
To: NEC ELECTRONICS CORPORATION
Reel/Frame 013767/0366 →
Assignment of Assignor's Interest
Feb 24, 2003
From: NEC CORPORATION
To: NEC ELECTRONICS CORPORATION; NEC CORPORATION
Reel/Frame 013438/0366 →
Assignment of Assignor's Interest
Nov 26, 2006
From: NEC CORPORATION; NEC ELECTRONICS CORPORATION
To: ELPIDA MEMORY, INC.
Reel/Frame 018545/0737 →
Assignment of Assignor's Interest
May 15, 2014
From: ELPIDA MEMORY, INC.
To: PS4 LUXCO S.A.R.L.
Reel/Frame 032900/0568 →