Patent Assignment
Reel/Frame 011531/0736
Assignment of Assignor's Interest
Recorded: 2001-02-09
Pages: 2
Assignors
HAMANAKA, NOBUAKI
Executed: 2000-12-01
INOUE, KEN
Executed: 2000-12-01
MIKAGI, KAORU
Executed: 2000-12-01
Assignee
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Method for Forming a Silicide of Metal with a High Melting Point in a Semiconductor Device
Patent:
6,569,766 →
Application:
09/697,508 →
Related Assignments
(3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 14, 2003
From: NEC CORPORATION
To: NEC ELECTRONICS CORPORATION
Reel/Frame 013574/0893 →
Assignment of Assignor's Interest
May 28, 2003
From: NEC CORPORATION
To: NEC ELECTRONICS CORPORATION
Reel/Frame 013687/0458 →
Change of Name
Nov 18, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025375/0909 →