IP Library › Assignment 013574/0893
Patent Assignment
Reel/Frame 013574/0893

Assignment of Assignor's Interest

Recorded: 2003-04-14 Pages: 10
Assignor
NEC CORPORATION
Executed: 2002-11-01
Assignee
NEC ELECTRONICS CORPORATION
1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI, KANAGAWA 211-8668, JAPAN
Covered Property (1)
Method for Forming a Silicide of Metal with a High Melting Point in a Semiconductor Device
Patent: 6,569,766 →
Application: 09/697,508 →
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Feb 9, 2001
From: HAMANAKA, NOBUAKI; INOUE, KEN; MIKAGI, KAORU
To: NEC CORPORATION
Reel/Frame 011531/0736 →
Assignment of Assignor's Interest May 28, 2003
From: NEC CORPORATION
To: NEC ELECTRONICS CORPORATION
Reel/Frame 013687/0458 →
Change of Name Nov 18, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025375/0909 →