Assignment of Assignor's Interest

Recorded: 2001-12-05 Pages: 2

Assignor

ONO, ATSUKI

Executed: 2001-11-27

Assignee

NEC CORPORATION

7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN

Covered Property (1)

MOS transistor fabrication method

Application: 10/010,339 →

Publication: US 2002/0068407

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.