Patent Application
Utility
App. No. 10/010,339
· Confirmation No. 7290
MOS transistor fabrication method
Inventor:
Atsuki Ono
Abandoned -- Failure to Respond to an Office Action
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-12-05 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-12-05 | SPEC |
Specification | 21 | View | |
| 2001-12-05 | CLM |
Claims | 2 | View | |
| 2001-12-05 | ABST |
Abstract | 1 | View | |
| 2001-12-05 | DRW |
Drawings-only black and white line drawings | 6 | View | |
| 2001-12-05 | OATH |
Oath or Declaration filed | 2 | View |
Inventors
Atsuki Ono
Tokyo, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/279
H10P30/204
H10D30/0227
H10P30/208
H10D64/01306
Prosecution
- Examiner
- LE, DUNG ANH
- Art Unit
- 2818
- Customer No.
- 26304
- Docket No.
- NEC 19.232
- Confirmation No.
- 7290
Foreign Priority
372121/2000
·
2000-12-06
·
JAPAN
Publication
- Pub. No.
- US20020068407A1
- Pub. Date
- 2002-06-06
No related applications found.
from
NEC CORPORATION
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-02-19
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Quick Facts
- App. No.
- 10/010,339
- Filed
- 2001-12-05
- Pub. No.
- US20020068407A1
- Examiner
- LE, DUNG ANH
- Art Unit
- 2818
External Links