Patent Assignment
Reel/Frame 013429/0181
Merger
Recorded: 2002-10-25
Received: 2002-11-01
Pages: 4
Assignor
MATSUSHITA ELECTRONICS CORPORATION
Executed: 2001-04-04
Assignee
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, OAZA KADOMA, KADOMA-SHI, OSAKA, 571-8501, JPX, JAPAN
Covered Properties
(9)
Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors
Application:
09/904,129 →
Apparatus and Method for Plasma Etching
Application:
09/892,723 →
Semiconductor Memory
Application:
09/875,960 →
Semiconductor Device Having Multilevel Interconnection Structure and Method for Fabricating the Same
Application:
09/835,169 →
Semiconductor Device and Method for Fabricating the Same
Application:
09/797,987 →
Semiconductor Device and Method of Manufacturing the Same
Application:
09/791,774 →
Semiconductor integrated circuit, computer system, data processor and data processing method
Application:
09/779,751 →
Fabrication Method of Capacitor for Integrated Circuit
Application:
09/768,170 →
Multilayer Wiring Structure of Semiconductor Device, Method of Producing Said Multilayer Wiring Structure and Semiconductor Device to Be Used for Reliability Evaluation
Application:
09/760,640 →