IP Library Assignment 013526/0261
Patent Assignment
Reel/Frame 013526/0261

Assignment of Assignor's Interest

Recorded: 2002-11-20 Pages: 2
Assignors
LEUNG, WINGYU
Executed: 2002-11-20
SIM, JAE-KWANG
Executed: 2002-11-20
Assignee
MONOLITHIC SYSTEM TECHNOLOGY, INC.
1020 STEWART DRIVE, SUNNYVALE, CALIFORNIA, 94085-3914
Covered Property (1)
Method and Apparatus for Temperature Adaptive Refresh in 1T-Sram Compatible Memory Using the Subthreshold Characteristics of Mosfet Transistors
Patent: 6,898,140 →
Application: 10/300,427 →
Publication: US 2003/0067830
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Apr 3, 2008
From: MONOLITHIC SYSTEM TECHNOLOGY, INC.
To: MOSYS, INC.
Reel/Frame 020741/0975 →
Assignment of Assignor's Interest Feb 13, 2012
From: MOSYS, INC.
To: INVENSAS CORPORATION
Reel/Frame 027698/0690 →
Security Interest Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
Release of Security Interest Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION
Reel/Frame 052920/0001 →