Patent Assignment
Reel/Frame 013653/0008
Assignment of Assignor's Interest
Recorded: 2003-01-14
Received: 2003-01-16
Pages: 6
Assignor
INTEL CORPORATION
Executed: 2002-12-04
Assignee
OVONYX, INC.
1090 BOEING STREET, BOISE, ID, 83705, UNITED STATES
Covered Properties
(18)
Method for Forming Phase-Change Memory Bipolar Array Utilizing a Single Shallow Trench Isolation for Creating an Individual Active Area Region for Two Memory Array Elements and One Bipolar Base Contact
Application:
10/196,870 →
Adhesion Layer for a Polymer Memory Device and Method Therefor
Application:
10/036,833 →
Method and Apparatus to Operate a Memory Cell
Application:
10/034,331 →
Technique and Apparatus for Performing Write Operations to a Phase Change Material Memory Device
Application:
10/021,469 →
Phase Change Material Memory Device
Application:
10/020,757 →
Reducing Leakage Currents in Memories with Phase-Change Material
Application:
09/976,641 →
Forming Tapered Lower Electrode Phase-Change Memories
Application:
09/975,163 →
Elevated Pore Phase-Change Memory
Application:
09/944,478 →
Method to Enhance Performance of Thermal Resistor Device
Application:
09/944,349 →
Pore Structure for Programmable Device
Application:
09/896,616 →
Reduced Area Intersection Between Electrode and Programming Element
Application:
09/895,020 →
Utilizing Atomic Layer Deposition for Programmable Device
Application:
09/896,529 →
Modified Contact for Programmable Devices
Application:
09/896,009 →
Programming a Phase-Change Material Memory
Application:
09/895,135 →
Programming a Phase-Change Memory with Slow Quench Time
Application:
09/895,054 →
Providing Equal Cell Programming Conditions Across a Large and High Density Array of Phase-Change Memory Cells
Application:
09/881,439 →
Compositionally Modified Resistive Electrode
Application:
09/780,805 →
Single Level Metal Memory Cell Using Chalcogenide Cladding
Application:
09/774,353 →