Patent Assignment
Reel/Frame 014126/0111
Assignment of Assignor's Interest
Recorded: 2003-05-28
Pages: 2
Assignors
OHNISHI, KAZUHIRO
Executed: 2003-05-14
SUGII, NOBUYUKI
Executed: 2003-05-14
ONAI, TAKAHIRO
Executed: 2003-05-14
Assignee
HITACHI LTD.
6, KANDA SURUGADAI 4-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Property
(1)
Fabrication Method and Device Structure of Shallow Trench Insulation for Silicon Wafer Containing Silicon-Germanium
Related Assignments
(4)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Oct 1, 2003
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 014573/0096 →
Assignment of Assignor's Interest
Nov 28, 2006
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 018559/0281 →
Merger
Jul 7, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024662/0280 →
Change of Address
Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →