IP Library Assignment 015411/0006
Patent Assignment
Reel/Frame 015411/0006

Assignment of Assignor's Interest

Recorded: 2004-05-28 Pages: 2
Assignors
YONEDA, KATSUMI
Executed: 2004-04-27
YOSHIE, TORU
Executed: 2004-04-27
Assignee
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
16-1 ONOGAWA, TSUKUBA-SHI, IBARAKI, 305-8569, JAPAN
Covered Property (1)
Method for Manufacturing a Semiconductor Device That Includes Plasma Treating an Insulating Film with a Mixture of Helium and Argon Gases
Patent: 7,056,825 →
Application: 10/855,466 →
Publication: US 2004/0248395
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 1, 2005
From: SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 016206/0616 →
Change of Name Sep 8, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024953/0224 →