Patent Assignment
Reel/Frame 015522/0087
Assignment of Assignor's Interest
Recorded: 2004-06-28
Pages: 2
Assignor
PARK, NAM KYU
Executed: 2004-06-10
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-UEP, ICHON-SHI, KYUNGKI-DO, 467-860, KOREA, REPUBLIC OF
Covered Property
(1)
A Transistor in a Semiconductor Substrate Having High-Concentration Source and Drain Region Formed at the Bottom of a Trench Adjacent to the Gate Electrode.
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.