Assignment of Assignor's Interest

Recorded: 2004-12-22 Pages: 3

Assignor

KIM, JUNG GEUN

Executed: 2004-11-25

Assignee

HYNIX SEMICONDUCTOR INC.

SAN 136-1, AMI-RI, BUBAL-EUP, ICHON-SHI, KYUNGKI-DO, Q467-860, KOREA, REPUBLIC OF

Covered Property (1)

Method of forming dielectric layer in semiconductor device

Application: 11/022,460 →

Publication: US 2006/0079097

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.