Assignment of Assignor's Interest

Recorded: 2004-12-30 Pages: 2

Assignor

SHIN, MOON JUNG

Executed: 2004-12-30

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10 DAECHI-DONG, GANGNAM-GU, SEOUL, 135-523, KOREA, REPUBLIC OF

Covered Property (1)

Method of Fabricating a Shallow Trench Isolation Structure in a Semiconductor Device

Application: 11/026,917 →

Publication: US 2005/0142804

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.