Patent Assignment
Reel/Frame 016722/0472
Security Agreement
Recorded: 2005-11-03
Received: 2005-11-03
Pages: 11
Assignor
NITRONEX CORPORATION
Executed: 2005-11-03
Assignee
SILICON VALLEY BANK
3003 TASMAN DRIVE, SANTA CLARA, CA, 95054-1191, UNITED STATES
Covered Properties
(19)
Gallium nitride material transistors and methods for wideband applications
Application:
60/723,824 →
Gallium Nitride Material Structures Including Substrates and Methods Associated with the Same
Application:
11/121,793 →
Gallium Nitride Materials and Methods Associated with the Same
Application:
11/096,505 →
Gallium nitride materials including thermally conductive regions
Application:
11/050,598 →
Iii-Nitride Material Structures Including Silicon Substrates
Application:
11/004,628 →
Monolithic microwave integrated circuits
Application:
60/622,871 →
Gallium Nitride Material Transistors and Methods Associated with the Same
Application:
10/913,297 →
Iii-Nitride Materials Including Low Dislocation Densities and Methods Associated with the Same
Application:
10/886,506 →
Substrate for Magnetic Recording Medium
Application:
10/879,795 →
Semiconductor Device-Based Sensors
Application:
10/879,704 →
Gallium Nitride Materials and Methods Associated with the Same
Application:
10/879,703 →
Gallium Nitride Material Devices Including an Electrode-Defining Layer and Methods of Forming the Same
Application:
10/740,376 →
Gallium nitride materials and methods
Application:
10/675,798 →
Gallium Nitride Material Devices and Methods of Forming the Same
Application:
10/650,122 →
Gallium Nitride Materials and Methods
Application:
10/188,814 →
Semiconductor structures including a gallium nitride material component and a silicon germanium component
Application:
10/047,455 →
Worm Food Composition
Application:
09/881,350 →
Gallium Nitride Material Devices and Methods Including Backside Vias
Application:
09/792,414 →
Gallium Nitride Materials Including Thermally Conductive Regions
Application:
09/792,409 →