IP Library Assignment 017404/0094
Patent Assignment
Reel/Frame 017404/0094

Assignment of Assignor's Interest

Recorded: 2005-12-22 Pages: 3
Assignor
LIM, TAE-HONG
Executed: 2005-12-15
Assignee
DONGBUANAM SEMICONDUCTOR INC.
891-10, DAECHI-DONG, KANGNAM-KU,, SEOUL, 135-523, KOREA, REPUBLIC OF
Covered Property (1)
Method of Manufacturing a High Voltage Semiconductor Device Including a Deep Well and a Gate Oxide Layer Simultaneously
Patent: 7,507,647 →
Application: 11/313,693 →
Publication: US 2006/0134850
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name May 23, 2006
From: DONGBU-ANAM SEMICONDUCTOR, INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 017663/0468 →