IP Library Assignment 017425/0247
Patent Assignment
Reel/Frame 017425/0247

Assignment of Assignor's Interest

Recorded: 2005-12-29 Pages: 2
Assignor
JEONG, YONG-SIK
Executed: 2005-12-29
Assignee
MAGNACHIP SEMICONDUCTOR LTD.
1 HYANGJEONG-DONG, HEUNGDUK-GU, CHEONGJU-SI, CHUNGCHEONGBUK-DO 361-725, KOREA, REPUBLIC OF
Covered Property (1)
Non-Volatile Memory Device Having Selection Gates Formed on the Sidewalls of Dielectric Layers
Patent: 8,143,663 →
Application: 11/319,567 →
Publication: US 2006/0203543
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
After-Acquired Intellectual Property Kun-Pledge Agreement Feb 18, 2009
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL TRUSTEE
Reel/Frame 022277/0133 →
Release of Security Interest Aug 12, 2013
From: U.S. BANK NATIONAL ASSOCIATION
To: MAGNACHIP SEMICONDUCTOR LTD.
Reel/Frame 030988/0419 →
Assignment of Assignor's Interest Sep 3, 2020
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: KEY FOUNDRY CO., LTD.
Reel/Frame 053703/0227 →
Change of Name Mar 12, 2024
From: KEY FOUNDRY CO., LTD.
To: SK KEYFOUNDRY INC.
Reel/Frame 066794/0290 →