Assignment of Assignor's Interest

Recorded: 2005-12-29 Pages: 3

Assignor

LEE, JUNE WOO

Executed: 2005-12-08

Assignee

DONGBUANAM SEMICONDUCTOR, INC.

891-10, DAECHI-DONG, GANGNAM-GU, SEOUL 135-280, KOREA, REPUBLIC OF

Covered Property (1)

Method for forming an intermetal dielectric layer in a semiconductor device using HDP-CVD, and a semiconductor device manufactured thereby

Application: 11/320,396 →

Publication: US 2006/0138667

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.