Assignment of Assignor's Interest

Recorded: 2005-12-30 Pages: 3

Assignor

AHN, HEUI-GYUN

Executed: 2005-12-28

Assignee

DONGBUANAM SEMICONDUCTOR INC.

891-10, DAECHI-DONG, KANGNAM-KU, SEOUL, 135-523, KOREA, REPUBLIC OF

Covered Property (1)

Method of forming shallow trench isolation

Application: 11/320,725 →

Publication: US 2007/0077723

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.