Patent Assignment
Reel/Frame 017430/0808
Assignment of Assignor's Interest
Recorded: 2005-12-29
Pages: 3
Assignor
KIM, WAN SHICK
Executed: 2005-12-13
Assignee
DONGBUANAM SEMICONDUCTOR INC.
891-10, DAECHI-DONG, GANGNAM-GU, SEOUL 135-280, KOREA, REPUBLIC OF
Covered Property
(1)
Method for Forming Shallow Trench Isolation Utilizing Two Filling Oxide Layers
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.