IP Library › Assignment 018337/0382
Patent Assignment
Reel/Frame 018337/0382

Assignment of Assignor's Interest

Recorded: 2006-09-29 Pages: 2
Assignors
HITACHI, LTD.
Executed: 2006-09-19
HITACHI ULSI SYSTEMS CO.
Executed: 2006-09-19
Assignee
RENESAS TECHNOLOGY CORP.
4-1, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Property (1)
Semiconductor device including stress inducing films formed over N-channel and P-channel field effect transistors and a method of manufacturing the same
Patent: 7,115,954 →
Application: 10/363,065 →
Publication: US 2004/0029323
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 13, 2003
From: SHIMIZU, AKIHIRO; OOKI, NAGATOSHI; NONAKA, YUSUKE; ICHINOSE, KATSUHIKO
To: HITACHI, LTD.; HITACHI ULSI LYSTEMS CO. LTD.
Reel/Frame 014512/0898 →
Assignment of Assignor's Interest Apr 18, 2004
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 015257/0286 →
Merger Jul 30, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025204/0512 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →